A Kinetic Model for Plasma Etching Silicon in a SF6/02 RF Discharge

IEEE Transactions on Plasma Science

Volumn 14, Issue 2, 1986, Pages 156-164

  Anderson, H M ^a   Merson, J A ^a   Light, R W ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC DISCHARGES - ELECTRONIC PROPERTIES; OXYGEN; PLASMAS - APPLICATIONS;

BOLTZMANN EQUATION; SULFUR HEXAFLUORIDE;

SEMICONDUCTING SILICON;

EID: 0022704634     PISSN: 00933813     EISSN: 19399375     Source Type: Journal    
DOI: 10.1109/TPS.1986.4316518     Document Type: Article

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