Electron states in GaAs/Ga1-xAlxAs heterostructures: Nonparabolicity and spin-splitting

Superlattices and Microstructures

Volumn 2, Issue 3, 1986, Pages 267-272

  Malcher, F ^a   Lommer, G ^a   Rossler U ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE - MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM COMPOUNDS;

ELECTRON STATES; NONPARABOLICITY; SEMICONDUCTOR HETEROSTRUCTURES; SPIN-SPLITTING;

SEMICONDUCTOR DEVICES;

EID: 0022582373     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/0749-6036(86)90030-3     Document Type: Article

References (26)

1. Nonparabolicity and warping in the conduction band of GaAs
2. Limits on band discontinuities in GaAs-GaAlAs heterostructures deduced from optical photoresponse
3. Two-dimensional electron gas at a semiconductor-semiconductor interface