A GaAs MESFET Oscillator Quasi-Linear Design Method

IEEE Transactions on Microwave Theory and Techniques

Volumn 34, Issue 1, 1986, Pages 19-25

  Abe, Hiroyuki ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, FIELD EFFECT - OPTIMIZATION;

GALLIUM ARSENIDE MESFET OSCILLATOR; QUASILINEAR DESIGN;

OSCILLATORS, SOLID STATE;

EID: 0022582173     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1986.1133275     Document Type: Article

References (9)

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2. H. Abe, Y. Takayama, A. Higashisaka, R. Yamamoto, and M. Takeuchi, “A high-power microwave GaAs FET oscillator,” in 1976 ISSCC Dig. Tech. Papers, Feb. 1976, pp. 164–165.
3. H. Abe, Y. Takayama, A. Higashisaka, and H. Takamizawa, “A stabilized, low-noise GaAs FET integrated oscillator with a dielectric resonator at C-band,” in 1977 ISSCC Dig. Tech. Papers, Feb. 1977, pp. 168–169.
4. M. Vehovec, L. Houselander, and R. Spence, “On oscillator design for maximum power,” IEEE Trans. Circuit Theory, vol. CT-15, pp. 281–283, Sept. 1968.
5. R. A. Pucel, R. Bera, and D. Masse, “Experiments on integrated gallium-arsenide f.e.t. oscillators at X-band,” Electron. Lett., vol. 11, pp. 219–220, May 1975.
6. Y. Mitsui, M. Nakatani, and S. Mitsui, “Design of GaAs MESFET oscillator using large-signal S-parameters,” IEEE Trans. Microwave Theory Tech., vol. MTT-25, pp. 981–984, Dec. 1977.
7. K. M. Johnson, “Large signal GaAs MESFET oscillator design,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 217–227, Mar. 1979.
8. Y. Tajima, B. Wrona, and K. Mishima, “GaAs FET large-signal model and its application to circuit designs,” IEEE Trans. Electron Devices, vol. ED-28, pp. 171–175, Feb. 1981.
9. J. Sone and Y. Takayama, “Equivalent circuit elements evaluation of GaAs MESFET,” presented at National Conv. of IECE, Japan, No. 104, Nov. 1976.