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Volumn 32, Issue 8, 1985, Pages 1430-1438

A Frame-Transfer CCD Color Imager with Vertical Antiblooming

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE PROCESSING; IMAGE SENSORS; SEMICONDUCTOR DEVICES, CHARGE COUPLED; SEMICONDUCTOR DEVICES, MOS; SEMICONDUCTOR MATERIALS - DOPING;

EID: 0022435576     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22141     Document Type: Article
Times cited : (30)

References (8)
  • 5
    • 0016025910 scopus 로고
    • Calculations on potential and charge distributions in the peristaltic charge coupled device
    • M. G. Collet and A. C. Vliegenthart, “Calculations on potential and charge distributions in the peristaltic charge coupled device,” Philips Res. Rep., vol. 29, pp. 2544, 1974.
    • (1974) Philips Res. Rep. , vol.29 , pp. 25-44
    • Collet, M.G.1    Vliegenthart, A.C.2
  • 6
    • 0016473426 scopus 로고
    • Field and potential distributions in charge-transfer devices
    • H. W. Hanneman and L. J. M. Esser, “Field and potential distributions in charge-transfer devices,” Philips Res. Rep., vol. 30, pp. 5672, 72, 1975.
    • (1975) Philips Res. Rep. , vol.30 , pp. 56-72
    • Hanneman, H.W.1    Esser, L.J.M.2
  • 7
    • 0018434050 scopus 로고
    • Characteristics of the overlaid charge coupled device
    • R. M. Barsan, “Characteristics of the overlaid charge coupled device,” IEEE Trans. Electron Devices, vol. ED-26, pp. 123134, 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 123-134
    • Barsan, R.M.1
  • 8
    • 84916579642 scopus 로고
    • Calculation of impurity atom diffusion through a narrow diffusion mask opening
    • D. P. Kennedy and P. C. Murley, “Calculation of impurity atom diffusion through a narrow diffusion mask opening,” IBM J. Res. Develop., vol. 10, pp. 612, 1966.
    • (1966) IBM J. Res. Develop. , vol.10 , pp. 6-12
    • Kennedy, D.P.1    Murley, P.C.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.