FORMATION OF 0. 1 mu M N** plus /P AND P** plus /N JUNCTIONS BY DOPED SILICIDE TECHNOLOGY.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1985, Pages 407-410

  Shone, F C ^a   Saraswat, K C ^a   Plummer, J D ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON;

DOPED SILICIDES; SEMICONDUCTOR JUNCTIONS; SILICON MATERIALS/DEVICES;

SEMICONDUCTOR DEVICES;

EID: 0022320625     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)