ANALYSIS OF DEFECTS IN THIN SiO//2 THERMALLY GROWN ON Si SUBSTRATE.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1985, Pages 372-375

  Abe, Hideshi ^a   Kiyosumi, Fumio ^a   Yoshioka, Kentarou ^a   Ino, Masayoshi ^a  

^a OKI ELECTRIC INDUSTRY CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; DATA STORAGE, DIGITAL; SEMICONDUCTING SILICON;

DIELECTRIC BREAKDOWN; MOS CAPACITORS; RANDOM-ACCESS MEMORIES; SILICON MATERIALS/DEVICES; SILICON SUBSTRATES;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022286033     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)