HYDROGEN DIFFUSION IN PLASMA DEPOSITED SILICON NITRIDE-ALUMINUM INTERFACE UNDER PLASMA PROCESSING AND ITS EFFECT ON FET DEVICE V//T SHIFT.

Electrochemical Society Extended Abstracts

Volumn 85-2, Issue , 1985, Pages 437-438

  Nguyen, S V ^a   Kim, S U ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN - DIFFUSION; MICROELECTRONICS - MATERIALS; SILICON NITRIDE - THIN FILMS;

DOPANT DRIVE-IN; EXTENDED ABSTRACT; GATE OXIDE; HYDROGEN BONDING; P-TYPE WAFERS;

SEMICONDUCTING SILICON;

EID: 0022280810     PISSN: 01604619     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)