BURIED SiC LAYERS IN (100) BULK SILICON AND SILICON-ON-SAPPHIRE PRODUCED BY CARBON ION IMPLANTATION.

Materials Research Society Symposia Proceedings

Volumn 45, Issue , 1985, Pages 323-328

  Kroko, L ^a   Golecki, I ^a   Glass, H L ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING SILICON - ION IMPLANTATION; SILICON CARBIDE - MANUFACTURE; X-RAYS - DIFFRACTION;

BURIED SILICON CARBIDE LAYERS; CARBON ION IMPLANTATION; DEKTAK PROFILOMETRY; RUTHERFORD BACKSCATTERING (RBS) SPECTRA; SILICON-ON-SAPPHIRE; SPREADING RESISTANCE;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0022213914     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-45-323     Document Type: Conference Paper

References (8)