HIGH POWER DISTRIBUTED AMPLIFIER USING MBE SYNTHESIZED MATERIAL.

Digest of Papers - IEEE Microwave and Millimeter-Wave Monolithic Circuits Symposium

Volumn , Issue , 1985, Pages 35-37

  Kim, B ^a   Tserng, H Q ^a   Shih, H D ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - GROWTH; TRANSISTORS, FIELD EFFECT;

ACTIVE LAYER; HIGH POWER DISTRIBUTED AMPLIFIER; LOW DOPED GATE BUFFER LAYER; MOLECULAR BEAM EPITAXY (MBE) GROWN MATERIAL;

AMPLIFIERS, POWER TYPE;

EID: 0022201341     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)