Theory of Gain, Modulation Response, and Spectral Linewidth in AlGaAs Quantum Well Lasers

IEEE Journal of Quantum Electronics

Volumn 21, Issue 10, 1985, Pages 1666-1674

  Arakawa, Yasuhiko ^a   Yariv, Amnon ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT - MODULATION; SEMICONDUCTING GALLIUM ARSENIDE;

QUANTUM WELL LASERS;

LASERS, SEMICONDUCTOR;

EID: 0022150649     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1985.1072555     Document Type: Article

References (17)

1. K. Y. Lau, N. Bar Chaim, I. Ury, Ch. Harder, and Y. Yariv. “Direct amplitude modulation of short-cavity GaAs lasers up to X-band frequency.” Appt. Phys. Lett., vol. 43. pp. 1–3, 1983.
2. M. W. Fleming and A. Mooradian “Fundamental line broadening of single mode (GaAl)As diode lasers.” Appt. Phys. Lett., vol. 38, pp. 511–513, 1981.
3. C. Henry, “Theory of the linewidth of semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-18. pp. 259-254, 1982.
4. K. Vahala and A. Yariv, “Semiclassical theory of noise in semiconductor lasers—Part 1,” IEEE J. Quantum Electron., vol. QE-18. pp. 1096–1101, 1982.
5. K. Vahala and A. Yariv, “Semiclassical theory of noise in semiconductor lasers—Part 2.” IEEE J. Quantum Electron., vol. QE-18. pp. 1102–1109, 1982.
6. K. Vahala and A. Yariv, “Detuned loading in coupled cavity semiconductor lasers—Effects on quantum noise and dynamics,” Appl. Phys. Lett., vol. 45, pp. 501–503, 1984.
7. N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Quantum-well heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-16, p. 170. 1980.
8. xAs-GaAs laser diodes by metalorganic chemical vapor deposition,” Appl. Phys. Lett., vol. 32, pp. 295–297, 1978.
9. 1−xAs multiquantum well heterostructure lasers prepared by molecular beam epitaxy,” Appl. Phys. Lett., vol. 35, pp. 673–675. 1979.
10. W. T. Tsang “A graded-index waveguide separate-confinement laser with very low threshold and a narrow Gaussian beam,” Appl. Phys. Lett., vol. 39, pp. 134–136, 1981.
11. W. T. Tsang “Extremely low threshold (AlGa)As modified multiquantum well heterostructure lasers grown by molecular beam epitaxy,” Appl. Phys. Lett., vol. 39, pp. 786–788, 1981.
12. Y. Arakawa. K. Vahala. and A. Yariv. “Quantum noise and dynamics in quantum well and quantumwire lasers,” Appl. Phys. Lett., vol. 45, pp. 950–952, 1984.
13. M. G. Burt. “Linewidth enhancement factor for quantum well lasers,” Electron. Lett., vol. 20, pp. 27–28, 1984.
14. Kobayashi, H. Iwamura, T. Saku, K. Otsuka, and H. Okamoto “Dynamic behavior of a GaAs-AlGaAs MQW laser diode,” Electron. Lett., vol. 19, pp. 166–167, 1983.
15. A. Sugimura, “Threshold current for AlGaAs quantum well lasers.” IEEE J. Quantum Electron., vol. QE-20. no. 4, pp. 336–343. 1984.
16. M. Asada, A. Kameyama. and Y. Suematsu “Gain and intervalence band absorption in quantum-well lasers.” IEEE J. Quantum Electron., vol. QE-20. no. 7, pp. 745–753, 1984.
17. K. Vahala, L. C. Chiu, S. Margalit, and A. Yariv “On the linewidth enhancement factor α in semiconductor injection lasers,” Appl. Phys. Lett., vol. 42, pp. 631–633, 1983.