Experimental determination of short-channel MOSFET parameters

Solid State Electronics

Volumn 28, Issue 10, 1985, Pages 1025-1030

  Chu Hao, ^a   Cabon Till, B ^a   Cristoloveanu, S ^a   Ghibaudo, G ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT - MODELING;

LOW-FIELD MOBILITY; MOSFET PARAMETERS; SHORT-CHANNEL DEVICES; SILICON CHIP; THRESHOLD VOLTAGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022145611     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90034-6     Document Type: Article

References (13)

1. Measurement of MOSFET constants
2. Détermination expérimentale des paramètres des transistors MOS
3. Electron mobility in short-channel MOSFET's with series resistances
4. A parametric short-channel MOS transistor model for subthreshold and strong inversion current
5. Physics of the MOS transistor
6. Vieillissement des transistors MOS submicroniques après contrainte électrique
7. Simple model for threshold voltage in a short-channel IGFET
8. Conductance of small semiconductor devices