Carrier diffusion effects in the time-response of a fast photodiode

Solid State Electronics

Volumn 28, Issue 9, 1985, Pages 925-931

  Ripamonti, G ^a   Cova, S ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; MATHEMATICAL STATISTICS - MONTE CARLO METHODS; SEMICONDUCTING SILICON - CHARGE CARRIERS;

CARRIER DIFFUSION EFFECTS; MONTE CARLO SIMULATION; SINGLE-PHOTON AVALANCHE DIODE; SPAD; TIME-RESPONSE;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0022130815     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(85)90086-3     Document Type: Article

References (11)

1. A semiconductor detector for measuring ultraweak fluorescence decays with 70 ps FWHM resolution
2. Characterization of Microplasma Sites in Silicon n+-p Junctions
3. Triggering phenomena in avalanche diodes