Large-Signal Criteria for the Design of GaAs FET Distributed Power Amplifiers

IEEE Transactions on Electron Devices

Volumn 32, Issue 9, 1985, Pages 1745-1748

  Ladbrooke, P H ^a  

^a Hirst Research Centre   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSISTORS, FIELD EFFECT - ANALYSIS;

LARGE-SIGNAL VOLTAGES; MONOLITHIC TRAVELING WAVE AMPLIFIER; POWER IMPEDANCE;

AMPLIFIERS, POWER TYPE;

EID: 0022120350     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22190     Document Type: Article

References (9)

1. Y. Ayasli, R. L. Mozzi, J. L. Vorhaus, L. D. Reynolds, and R. A. Pucel, “A monolithic GaAs 1 – 13 GHz travelling-wave amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, p. 976, 1982.
2. E. W. Strid and K. R. Gleason, “A DC-12 GHz monolithic GaAs FET distributed amplifier,” IEEE Trans. Microwave Theory Tech., vol. MTT-30, p. 969, 1982.
3. J. A. Archer, F. A. Petz, and H. P. Weidlich, “GaAs FET distributed amplifier,” Electron. Lett., vol. 17, p. 433, 1981.
4. B. Kim and H. Q. Tserng, “0.5 W 2 – 21 GHz monolithic GaAs distributed amplifier,” Electron. Lett., vol. 20, p. 288, 1984.
5. Y. Ayasli, L. D. Reynolds, R. L. Mozzi, and L. K. Hanes, “2-20 GHz GaAs travelling-wave power amplifier, ”IEEE Trans. Microwave Theory Tech., vol. MTT-32, p. 290, 1984.
6. Y. Ayasli, S. W. Miller, R. Mozzi, and L. K. Hanes, “Capacitively coupled travelling-wave power amplifier, '' in IEEE Microwave Milli-metre-Wave Monolithic Circuits Symp. Dig. (San Francisco, May 29–30, 1984), p. 52.
7. P. H. Ladbrooke, “Power limiting due to impact ionization in GaAs MESFET's,” Electron. Lett., vol. 17, p. 338, 1981.
8. C. S. Den Brinker and M. Parkyn, British Patent Specification 1235472, June 26, 1971.
9. E. L. Ginzton, W. R. Hewlett, J. H. Jasberg, and J. D. Noe, “Distributed amplification,” Proc. IRE, vol. 36, p. 956, 1948.