Analytical Model for Predicting Threshold Voltage in Submicrometer-Channel MOSFET’s

IEEE Transactions on Electron Devices

Volumn 32, Issue 9, 1985, Pages 1890-1893

  Tang, Ting Wei ^a   Navon, David H ^a   Zhang, Qian Ung ^b  

^a UNIVERSITY OF MASSACHUSETTS   (United States)

^b FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

QUASI-TWO-DIMENSIONAL ANALYSIS; SUBMICROMETER-CHANNEL MOSFET'S; THRESHOLD VOLTAGE ANALYTICAL CLOSED-FORM MODEL; UNIFORM DEPLETION-LAYER WIDTH ASSUMPTION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022118127     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22216     Document Type: Article

References (8)

1. H. S. Lee, “An analysis of the threshold voltage for short-channel IGFGT's,” Solid-State Electron., vol. 16, pp. 1407–1417, 1973.
2. L. D. Yau, “A simple theory to predict the threshold voltage of short-channel IGFGT'SSolid-State Electron., vol. 17, pp. 1059–1063, 1974.
3. L. M. Dang, “A simple current model for short-channel IGFGT and its application to circuit simulation,” IEEE J. Solid-State Circuits, vol. SC-14, no, 2, pp. 358–367, 1979.
4. D. J. Coe, H. E. Brockman, and K. H. Nicholas, “A comparison of simple and numerical two-dimensional models for the threshold voltage of short-channel MOSTS,” Solid-State Electron., vol. 20, pp. 993, 1977.
5. A. Husain and S. G. Chamberlain, ''Three-dimensional simulation of VLSI MOSFET's: The three-dimensional simulation program WATMOS,”IEEE Trans. Electron Devices, vol. ED-29, pp 631, 1982.
6. T. Toyabe and S. Asai, “Analytical model of threshold voltage and breakdown voltage of short-channel MOSFET's derived from two-dimensional analysis,” IEEE Trans. Electron Devices, vol. ED-26, pp. 453–461, 1979.
7. W. L. Engl, H. K. Dirks, and B. Meinevzhagen, “Device modeling,” Proc. IEEE, vol. 71, pp. 10–33, 1983.
8. J. S. Fu, “Dominant subthreshold conduction paths in short-channel MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, pp. 440–447, 1984.