A Large-Signal GaAs MESFET Model Implemented on SPICE

IEEE Circuits and Devices Magazine

Volumn 1, Issue 5, 1985, Pages 21-30

  Golio, J Michael ^a   Hauser, John R ^a   Blakey, Peter A ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, POWER TYPE; INTEGRATED CIRCUITS, LSI - COMPUTER AIDED DESIGN; SEMICONDUCTING GALLIUM ARSENIDE;

CHANNEL LENGTH MODULATION; DRIFT VELOCITY SATURATION; GALLIUM ARSENIDE MESFET; MESFET INTEGRATED CIRCUITS; SPICE PROGRAM;

SEMICONDUCTOR DEVICES;

EID: 0022114973     PISSN: 87553996     EISSN: None     Source Type: Journal    
DOI: 10.1109/MCD.1985.6312015     Document Type: Article

References (25)

1. W. C. Petersen and A. K. Gupta, “A Two-Stage Monolithic Buffer Amplifier for 20 GHz Satellite Communications,” IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp. Digest of Papers, pp. 37–39, 1983.
2. M. Feng, H. Kanker, V. K. Eu, L. M. Hackett, H. Yamasaki, E. T. Watkin, and J. M. Schellenburg, “Optimization of Ion-Implanted Implanted GaAs Low-Noise FET,” 41st Annual Device Research Conf., June 1983.
3. H. M. Hobgood, G. W. Eldridge, D. L. Barrett, and R. N. Thomas, “High-Purity Semi-insulating GaAs Material for Monolithic Microwave Integrated Circuits,” IEEE Trans. Electron Devices, vol. ED-28, pp. 140–149, Feb. 1981.
4. S. I. Long, B. M. Welch, R. C. Eden, F. S. Lee, and R. Zucca, “MSI High Speed Low Power GaAs ICs Using Schottky Diode FET Logic,” MTT Symp. Digest, pp. 509–511, 1979.
5. R. Zuleeg, J. K. Nottoff, and K. Lehovec, “Fempto Joule High Speed Planar GaAs E-JFET Logic,” IEEE Trans. Electron Devices, vol. ED-25, pp. 628–639, June 1978.
6. K. Lehovec and R. Zuleeg, “Voltage-Current Characteristics of GaAs JFETs in the Hot-Electron Range,” Solid-State Electronics, vol. 13, 1415–1426, 1970.
7. C. D. Hartgring, “An Accurate JFET/MESFET Model for Circuit Analysis,” Solid-State Electronics, vol. 25, pp. 233–240, 1982.
8. C. D. Hartgring, “Silicon MESFETs,” Ph.D. Thesis, University of California, Berkeley, 1981.
9. J. M. Golio and R. J. Trew, “Profile Studies of Ion-Implanted MESFETs,” IEEE Trans. Microwave Theory and Techn., vol. MTT-31, pp. 1066–1071, Dec. 1983.
10. J. M. Golio, G. N. Maracas, D. Johnson, R. J. Trew, and N. A. Masnari, “A Technique for Modeling Ion-Implanted GaAs MESFETs in the Presence of Deep Levels,” IEEE/Cornell Conf. on High-Speed Semiconductor Devies & Circuits, pp. 125–134, 1983.
11. R. A. Pucel, H. Statz, and H. A. Haus, “Signal and Noise Properties of Gallium Arsenide Microwave Field-Effect Transistors,” in Advances in Electronics and Electron Physics, vol. 38, New York: Academic Press, pp. 195–265, 1975.
12. M. Ino, M. Hirayama, K. Kurumada, and M. Ohmori, “Estimation of GaAs Static RAM Performance,” IEEE Trans. Electron Devices, vol. ED-29, pp. 1130–1134, July 1982.
13. T. H. Glisson, J. R. Hauser, R. J. Trew, J. M. Golio, M. Abusaid, and K. Williams, “Two-Dimensional Modeling of GaAs MESFET Devices for Integrated High-Speed Logic Circuits,” fFinal report submitted to Rockwell International Electronics Research Center, Jan. 1, 1981-Sept. 30, 1982.
14. Y. Tsividis and G. Masetti, “Problems in Precision Modeling of the MOS Transistor for Analog Applications,” IEEE Trans. on Computer-Aided Design, vol. CAD-3, pp. 72–79, Jan. 1984.
15. L. W. Nagel, “SPICE2: A Computer Program to Simulate Semiconductor Circuits,” Electronics Research Laboratory, Univ. of California, Berkeley, Memo ERL-M520, 1975.
16. A. Vladimirescu and S. Liu, “Simulation of MOS Integrated Circuits Using SPICE2,” Electronics Research Laboratory, Univ. of California, Berkeley, Memo ERL-M80/7, 1980.
17. S. E. Sussman-Fort, S. Narasimhan, and K. Mayaram, “A Complete GaAs MESFET Computer Model for SPICE,” IEEE Trans. Microwave Theory and Techn., vol. MTT-32, pp. 471–473, April 1984.
18. A. Madjar and F. J. Rosenbaum, “A Practical AC Large-Sig-nal Model for GaAs Microwave MESFETs,” MTT Symp., pp. 399–401, 1979.
19. H. A. Willing, C. Rauscher, and P. DeSantis, “A Technique for Predicting Large-Signal Performance of a GaAs MESFET,” IEEE Trans. Microwave Theory and Techn., vol. MTT-26, pp. 1017–1023, Dec. 1978.
20. S. J. Lee, R. P. Vahrenkamp, G. R. Kaelim, L. D. Hou, R. Zucca, C. P. Lee, and C. G. Kirkpatrick, “Ultra-Low Power, High-Speed GaAs 256-bit Static RAM,” GaAs IC Symp. Technical Digest, pp. 74–77, 1983.
21. F. H. Eisen and R. Zucca, “Low Power Radiation Hard GaAs RAM,” semi-annual technical report for period 12/10/82 through 6/9/83, sponsored by Defense Advanced Research Projects Agency, ARPA order no. 4100, contract no. MDA903-83-C-0067, Rockwell International, Thousand Oaks, CA, 1983.
22. R. J. Trew, “Octave-Band GaAs FET YIG-Tuned Oscillators,” IEEE Trans. Microwave Theory and Techn., vol. MTT-27, pp. 8—14, 14, Jan. 1979.
23. J. M. Golio, P. A. Blakey, and R. O. Grondin, “A General CAD Tool for Large-Signal GaAs MESFET Circuit Design,” IEEE MTT-S International Microwave Symp. Digest, St. Louis, MO, pp. 417–420, 1985.
24. R. G. Hicks and P. J. Khan, “Numerical Analysis of Nonlinear Solid-State Device Excitation in Microwave Circuits,” IEEE Trans. Microwave Theory and Techn., vol. MTT-30, pp. 251–259, Mar. 1982.
25. M. S. Nakhla and J. Vlach, “A Piecewise Harmonic Balance Technique for Determination of Periodic Response of Nonlinear Systems,” IEEE Trans. Circuits and Syst., vol. CAS-23, pp. 85–91, Feb. 1976.