Transient response of photoluminescence for electric field in a gaas/al0.7ga0.3as single quantum well: Evidence for field-induced increase in carrier life time

Japanese Journal of Applied Physics

Volumn 24, Issue 8, 1985, Pages L586-L588

  Yamanishi, Masamichi ^a   Usami, Yuichi ^a   Kan, Yasuo ^a   Suemune, Ikuo ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS - ELECTRIC FIELD EFFECTS;

ALUMINUM GALLIUM ARSENIDE; CARRIER LIFETIME; SINGLE QUANTUM WELL; TRANSIENT RESPONSE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022112596     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.L586     Document Type: Article

References (6)

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