Modeling the Critical Area in Yield Forecasts

IEEE Journal of Solid-State Circuits

Volumn 20, Issue 4, 1985, Pages 874-878

  Ferris Prabhu, A V ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PROBABILITY;

CIRCUIT ACTIVE AREA; DEFECT DENSITY; YIELD FORECASTS;

SEMICONDUCTOR DEVICES;

EID: 0022102574     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1985.1052403     Document Type: Article

References (11)

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4. [4] C H Stapper, F. M Armstrong, and K Saji, “Integrated yield statistics,” Proc IEEE, vol. 71, pp. 453–479, 1983.
5. [5] A V Ferris-Prabhu, “Critical area for rectangular Patterns,” IBM Tech. Rep , TR 19 90199, 1981.
6. [6] A V Ferris-Prabhu, “Fault probability and critical area in VLSI yield projection,” IBM Tech Rep., TR 19 90200, 1982
7. [7] A V Ferris-Prabhu,. “Spectral analysis of the spatial distribution of radiation damage in silicon,” in Proc 1966 Int. Symp Lattice Defects Semiconductors (Tokyo, Japan), 1966.
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10. [10] A V. Ferns-Prabhu and D H Withers, “Numerical analytic continuation using Pade approximants,” J. Comput Phys , vol 13, pp 94–99, 1973.
11. [11] A V Ferns-Prabhu, “Defect size variations and theireffect on the critical area of VLSI devices,” pp 878–879, this issue