MOS HYDROGEN SENSORS WITH ULTRATHIN LAYERS OF PALLADIUM.

IEEE Transactions on Electron Devices

Volumn ED-32, Issue 7, 1985, Pages 1158-1164

  Maclay, G Jordan ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SEMICONDUCTING SILICON - APPLICATIONS; SENSORS;

HYDROGEN SENSORS;

SEMICONDUCTOR DEVICES, MOS;

EID: 0022085498     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/t-ed.1985.22093     Document Type: Article

References (25)