One atomic layer heterointerface fluctuations in gaas-aias quantum well structures and their suppression by insertion of smoothing period in molecular beam epitaxy

Japanese Journal of Applied Physics

Volumn 24, Issue 6 A, 1985, Pages L417-L420

  Sakaki, Hiroyuki ^a   Tanaka, Masaaki ^a   Yoshino, Junji ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAMS - APPLICATIONS; PHOTOLUMINESCENCE - MEASUREMENTS; SEMICONDUCTING ALUMINUM COMPOUNDS - GROWTH;

INSERTION OF SMOOTHING PERIOD; MOLECULAR BEAM EPITAXY; ONE ATOMIC LAYER HETEROINTERFACE FLUCTUATIONS; QUANTUM WELL STRUCTURES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022080294     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.L417     Document Type: Article

References (8)

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