Antimony and Arsenic Segregation at Si-SiO2Interfaces

IEEE Electron Device Letters

Volumn 6, Issue 6, 1985, Pages 285-287

  Sai Halasz, G A ^a   Short, K T ^a   Williams, J S ^a  

^a RMIT UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

HEAT TREATMENT - ANNEALING; SEMICONDUCTING SILICON COMPOUNDS - DOPING;

ANTIMONY AND ARSENIC SEGREGATION; DIFFUSING DOPANTS; SILICON-SILICON OXIDE INTERFACE;

SEMICONDUCTING SILICON;

EID: 0022076075     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26127     Document Type: Article

References (7)

1. D. B. Scott, W. R. Hunter, and H. Shichijo, “A transmission line model for silicided diffusions; impact on the performance of VLSI circuits,” IEEE Trans. Electron Devices, vol. ED-29, vol. p. 651, 1982.
2. G. A. Sai-Halasz, “Implant-defined shallow FET source/drain junctions,” IBM Tech. Disc. Bull., vol. 26, p. 3018, 1983.
3. A. P. Pogany, T. Preuss, K. T: Short, H. K. Wagenfeld, and J. S. Williams, “Metastable solid solutions of antimony in (100) silicon,” Nucl. Inst. Meth., vol. 209/210, p. 731, 1983.
4. S. A. Schwartz, R. W. Barton, C. P. Ho, and C. R. Helms, “Studies of phosphorous pile-up at the Si-Si02interface using Auger sputter profiling,” J. Electrochem. Soc., vol. 128, p. 1101 1981.
5. B. Swaminathan, E. Demoulin, T. W. Sigmon, R. W. Dutton, and R. Reif, “Segregation of arsenic to the grain boundaries in polycrystalline silicon,” J. Electrochem. Soc., vol. 127, p. 2227, 1980.
6. J. L. Tandon, H. B. Harrison, C. L. Neoh, K. T. Short, and J. S. Williams “The annealing behavior of antimony implanted polycrystalline silicon,” Appl. Phys. Lett., vol. 40, p. 229, 1982.
7. C. P. Ho, J. D. Plummer, S. E. Hansen, and R. W. Dutton, “VLSI process modeling—SUPREME III,” IEEE Trans. Electron Devices, vol. ED-30, p. 1438, 1983.