20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links

Electronics Letters

Volumn 21, Issue 11, 1985, Pages 469-471

  Schlafer, J ^a   Su, C B ^a   Powazinik, W ^a   Lauer, R B ^a  

^a VERIZON   (United States)

Author keywords

Photodetectors; Photoelectric devices; Semiconductor devices and materials

Indexed keywords

PHOTODETECTORS - LASER APPLICATIONS;

DIODE LASER;

TELECOMMUNICATION LINKS, OPTICAL;

EID: 0022062097     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19850333     Document Type: Article

References (8)

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2. WANG, S. Y., and BLOOM, D. M.: ‘100 GHz bandwidth planar GaAs Schottky photodiode’, Electron. Lett., 1983, 19, pp. 554-555
3. WANG, S. Y., BLOOM, D. M., and COLLINS, D. M. : ‘20 GHz bandwidth GaAs photodiode’, Appl. Phys. Lett., 1983, 42, pp. 190-192
4. BLAUVELT, H., THERMOND, G., PARSONS, J., LEWIS, D., a nd YEN, H.: ‘Fabrication and characterization of GaAs Schottky barrier photodiodes for microwave fiber optic links’, Appl. Phys. Lett., 1984, 45, pp. 195-196
5. LEE, T. P., BURRUS, C. A., OGAWA, K., and DENTAI, A. G.: ‘Very-highspeed back-illuminated InGaAsP/InP PIN punch-through photodiodes’, Electron. Lett., 1981, 17, pp. 431-432
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7. WIESENFELD, J. M., CHRAPLYVY, A. R., STONE, J., and BURRUS, C. A.: ‘Measurement of very-high-speed photodetectors with picosecond InGaAsP film lasers’, Electron. Lett., 1983, 19, pp. 22-24
8. LUCOVSKY, G., SCHWARZ, R. F., and EMMONS, R. B.: ‘Transit-time considerations in p-i-n diodes’, Appl. Phys. Lett., 1964, 35, pp. 622-628