Geometry Effects in MOSFET Channel Length Extraction Algorithms

IEEE Electron Device Letters

Volumn 6, Issue 4, 1985, Pages 186-188

  Wordeman, M R ^a   Sun, J Y C ^a   Laux, S E ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LENGTH; GEOMETRY EFFECTS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022046260     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26091     Document Type: Article

References (6)

1. K. Terada and H. Muta, “A new method to determine effective MOSFET channel length,” Japan J. Appl. Phys., vol, 18, p. 953, May 1979.
2. J. G. J. Cben, P. Chang, R. F. Motta, and N. Godinho, “A new method to determine MOSFET channel length,” IEEE Electron Device Lett., vol. EDL-1, p. 170, Sept. 1980.
3. B. J. Sheu, C. Hu, P. K. Ho, F. -C. Hsu, “Source-and-drain series resistance of LDD MOSFET's” IEEE Electron Dev. Lett., vol. EDL-5, p. 365, Sept. 1984.
4. S. E. Laux, “Accuracy of an effective channel length/external resistance extraction algorithm for MOSFET's,” IEEE Trans. Electron Devices, vol. ED-31, p. 1245, Sept. 1984.
5. E. M. Buturla, P. E. Cottrell, B. M. Grossman, and K. A. Salsburg, “Finite-element analysis of semiconductor devices: The FIELDAY program,” IBM J. Res. Develop., vol. 25, p. 218, July 1981.
6. G. D. Hachtel, T. R. Scott, and R. P. Zug, “An interactive linear programming approach to model parameter fitting and worst case circuit design,” in 1980 IEEE Int. Symp. on Circuits and Systems Proc., vol. 1, 1980, p. 40.