Influence of Deposition Temperature, Gas Pressure, Gas Phase Composition, and RF Frequency on Composition and Mechanical Stress of Plasma Silicon Nitride Layers

Journal of the Electrochemical Society

Volumn 132, Issue 4, 1985, Pages 893-898

  Valkenburg, W G J N ^b   Willemsen, M F C ^b   Wijgert, W M V D ^b  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON COMPOUNDS - MECHANICAL PROPERTIES; SPECTROSCOPY, INFRARED;

GAS PHASE COMPOSITION; INFLUENCE OF DEPOSITION TEMPERATURE; MECHANICAL STRESS; PLASMA SILICON NITRIDE LAYERS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0022046041     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2113980     Document Type: Article

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