SCOPUS 정보 검색 플랫폼

Volumn 64, Issue 3, 1985, Pages 861-882

Reliability of InGaAs Photodiodes for SL Applications

a NONE

Author keywords

[No Author keywords available]

Indexed keywords

QUALITY ASSURANCE; TELECOMMUNICATION CABLES - SUBMARINE;

ACTIVATION ENERGY; OVERSTRESS CONDITIONS; TAT-8 SUBMARINE CABLE;

SEMICONDUCTOR DIODES, PHOTODIODE;

EID: 0022035070 PISSN: 87562324 EISSN: 15387305 Source Type: Journal
DOI: 10.1002/j.1538-7305.1985.tb00450.x Document Type: Article

Times cited : (31)

References (18)

2
- 84944847813
- “High Temperature Reliability of Vapor‐Grown InGaAs Photodiodes,” Topical meeting on Optical Fiber Communication, Phoenix, Ariz., 1315
- (1982)
- Olsen, G.H.¹ Ettenberg, M.²

3
- 84944847814
- “The Reliability of GaInAs Photodiodes and GaAs FETs for Use in PIN‐FET Fiber Optic Receivers,” IEEE Specialist Conference on Light‐Emitting Diodes and Photodetectors, Ottawa‐Hull
- (1516)
- Jenkins, D.G.¹ Mabbit, A.W.²

4
- 0020979363
- “Design of the SLC™ 96 System Loop Lightwave Feature,” IEEE Int. Conf. Commun., Boston, Mass., Conf. Rec., I, pp.
- (1983) , pp. 91-94
- Nemchik, J.M.¹ Buckler, M.J.²

5
- 0019532257
- “A GaInAs/InP Heterophotodiode With Reduced Dark Current,”
- (1981) IEEE Journal of Quantum Electronics , vol.17 QE , pp. 255-259
- Pearsall, T.P.¹

6
- 0018983869
- “Small Area InGaAs/InP p‐i‐n Photodiodes,”
- (1980) Elec. Lett. , vol.16 , pp. 155-156
- Lee, T.P.¹

7
- 0019613085
- “Low‐Leakage, High Efficiency, Reliable VPE InGaAs 1.0–1.7 μm Photodiodes,”
- (1981) IEEE Elec. Device Lett. , vol.2 EDL , pp. 217-219
- Olsen, G.H.¹

9
- 84944847816
- “Degradation of Silicon Nitride‐Protected InGaAs p‐i‐n Photodiodes by an Electrochemical Etching Reaction,” IEEE Specialist Conference on Light‐Emitting Diodes and Photodetectors, Ottawa‐Hull, Canada
- (1982)
- Lichtmann, L.S.¹ Kohl, P.A.² Burton, R.H.³

10
- 0020115367
- “Recent Advances in the Performance and Reliability of InGaAsP LEDs for Lightwave Communication Systems,”
- (1983) IEEE Transactions on Electron Devices , vol.30 ED , pp. 285-295
- Saul, R.H.¹

11
- 0001558518
- New York, N.Y.:, Springer‐Verlag
- (1980) Topics in Applied Physics , vol.39 , pp. 89-160
- Smith, R.G.¹ Personick, S.D.²

12
- 0003654850
- New York, N.Y.:, Springer‐Verlag
- (1980) Topics in Applied Physics, 39 , pp. 63-87
- Schinke, D.P.¹ Smith, R.G.² Hartman, A.R.³

14
- 0015205831
- “The Analysis of Data From Accelerated Stress Tests,”
- (1971) Proc. Reliability Phys. Symp., Las Vegas, Nev. , pp. 69-78
- Peck, D.S.¹

16
- 0021392735
- 0.47As PIN Photodiodes,”
- (1984) J. Appl. Phys. , vol.55 , pp. 1596-1606
- Chin, A.K.¹ Chen, F.S.² Ermanis, F.³

17
- 0015763197
- “Temperature‐Humidity Acceleration of Metal‐Electrolysis Failure in Semiconductor Devices,”
- (1973) Proc. Reliability Phys. Symp., Las Vegas, Nev. , pp. 146-152
- Peck, D.S.¹ Zierdt, C.H.²

18
- 0020930358
- “Reliability Assurance for Devices With a Sudden‐Failure Characteristic,” IEEE Elec. Device Lett., EDL‐4
- (1983) , pp. 467-468
- Saul, R.H.¹ Chen, F.S.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.