A Modification on “An Improved Method to Determine MOSFET Channel Length”

IEEE Electron Device Letters

Volumn 6, Issue 3, 1985, Pages 109-110

  Whitfield, J ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - APPROXIMATION THEORY;

MOSFET CHANNEL LENGTH; PARASITIC DRAIN/SOURCE SERIES RESISTANCE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022028916     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1985.26062     Document Type: Article

References (1)

1. K. L. Peng and M. A. Afromowitz, An improved method to improve MOSFET channel length,” IEEE Electron Device Lett., vol. EDL 3, pp. 360–362, Dec. 1982.