Surface modification in plasma-assisted etching of silicon

Nuclear Inst. and Methods in Physics Research, B

Volumn 7-8, Issue PART 2, 1985, Pages 825-830

  Mizutani, T ^a   Dale, C J ^a   Chu, W K ^a   Mayer, T M ^a  

^a UNIVERSITY OF NORTH CAROLINA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SURFACES - RADIATION EFFECTS;

ION BOMBARDMENT; RUTHERFORD BACKSCATTERING-CHANNELING; SIMS ANALYSIS;

SILICON AND ALLOYS;

EID: 0022025679     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(85)90477-X     Document Type: Article

References (30)

1. Ion-assisted etching of silicon by molecular chlorine
2. Electrical, structural, and bonding changes induced in silicon by H, Ar, and Kr ion-beam etching
3. Sputtering by Particle Bombardment I and II
4. Sputtering by Particle Bombardment I and II
5. Investigation of plasma etching mechanisms using beams of reactive gas ions
6. Fabrication of SiO2Blazed Holographic Gratings by Reactive Ion-Etching
7. Reactive ion beam etching of InP with Cl2
8. Degradation of oxide films due to radiation effects in exposure to plasmas in sputter deposition and backsputtering
9. Damage in the Surface Region of Silicon Produced by Sputter-Etching