Etching of silicon by SF6 induced by ion bombardment

Nuclear Inst. and Methods in Physics Research, B

Volumn 13, Issue 1-3, 1986, Pages 556-560

  Oostra, D J ^a   Haring, A ^a   De Vries, A E ^a   Sanders, F H M ^b   Van Veen, G N A ^b  

^a FOM INSTITUTE AMOLF   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ION BEAMS - APPLICATIONS; SPUTTERING;

ION-ASSISTED ETCHING; PLASMA ETCHING; WAFER PROCESSING;

SILICON AND ALLOYS;

EID: 0022022751     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(86)90565-3     Document Type: Article

References (26)

1. Ion-assisted etching of silicon by molecular chlorine
2. Surface modification in plasma-assisted etching of silicon
3. II. The energy spectrum of ejected atoms during the high energy sputtering of gold