Two-dimensional numerical analysis of amorphous-silicon field-effect transistors

Japanese Journal of Applied Physics

Volumn 24, Issue 2 R, 1985, Pages 200-207

  Hirose, Nobumitsu ^a   Uchida, Yasutaka ^a   Matsumura, Masakiyo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - NUMERICAL ANALYSIS; SEMICONDUCTING SILICON - AMORPHOUS;

FETS; LOCALIZED STATES; SHORT-CHANNEL TRANSISTOR PERFORMANCE; TWO-DIMENSIONAL NUMERICAL ANALYSIS;

TRANSISTORS, FIELD EFFECT;

EID: 0022011983     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.200     Document Type: Article

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