Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxy

Applied Physics Letters

Volumn 46, Issue 4, 1985, Pages 427-429

  Skolnick, M S ^a   Harris, T D ^a   Tu, C W ^a   Brennan, T M ^a   Sturge, M D ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b TELCORDIA TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LASERS - APPLICATIONS; LIGHT - POLARIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

BOUND EXCITON MODEL; MOLECULAR BEAM EPITAXY;

LUMINESCENCE;

EID: 0022010115     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.95601     Document Type: Article

References (0)