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Volumn 530, Issue , 1985, Pages 230-239

Formation of silicon on insulator structures by ion implantation

Author keywords

[No Author keywords available]

Indexed keywords

BURIED DIELECTRIC LAYERS; BURIED NITRITES; REACTIVE IONS; SILICON ON INSULATOR STRUCTURES; SILICON WAFERS; SUBSTRATES;

EID: 0021979353     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.946491     Document Type: Conference Paper
Times cited : (6)

References (48)
  • 32
    • 0009437857 scopus 로고
    • Huff, H. R. Kriegler, R. J. and Takeishi, Y, The Electrochem Soc, Pennington, 1981
    • Patel, J. R. Semiconducting Silicon 1981, ed. Huff, H. R. Kriegler, R. J. and Takeishi, Y. p 189 (The Electrochem Soc, Pennington, 1981).
    • (1981) Semiconducting Silicon , pp. 189
    • Patel, J.R.1
  • 33
    • 84958496544 scopus 로고    scopus 로고
    • to be published
    • Foster, D. to be published.
    • Foster, D.1
  • 37
    • 84958496546 scopus 로고    scopus 로고
    • to be published
    • Davis, J. to be published.
    • Davis, J.1
  • 42
    • 84958496547 scopus 로고    scopus 로고
    • to be published
    • Meekison, D. to be published.
    • Meekison, D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.