A New Vertical Power MOSFET Structure with Extremely Reduced On-Resistance

IEEE Transactions on Electron Devices

Volumn 32, Issue 1, 1985, Pages 2-6

  Ueda, Daisuke ^a   Takagi, Hironiitsu ^a   Kano, Gota ^a  

^a Matsuhita Electronics Corporation ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - RESISTANCE; ION BEAMS - APPLICATIONS; SEMICONDUCTOR MATERIALS - ETCHING;

POWER MOSFET STRUCTURE; REACTIVE ION-BEAM ETCHING (RIBE) TECHNIQUE; RECTANGULAR-GROOVED MOSFET (RMOS); REDUCED ON-RESISTANCE; VERTICAL CHANNELS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021787429     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.21900     Document Type: Article

References (12)

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