'BOUNDARY ELEMENT METHOD FOR MODELING THE DMOS TRANSISTOR AT HIGH DRAIN VOLTAGES'.

Volumn , Issue , 1984, Pages 69-81

  De Mey, G ^a   Loret, D ^a   Van Calster, A ^a  

^a GHENT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

MATHEMATICAL TECHNIQUES - BOUNDARY ELEMENT METHOD; SEMICONDUCTOR DEVICES, MOS - MATHEMATICAL MODELS;

BOUNDARY ELEMENT METHOD; GREEN'S THEOREM; HIGH DRAIN VOLTAGES; MAXIMUM DRAIN VOLTAGE; MODELING THE DMOS TRANSISTOR; PIECEWISE CONSTANT APPROXIMATION;

TRANSISTORS;

EID: 0021648773     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)