ENHANCEMENT OF HOT-ELECTRON CURRENTS IN GRADED-GATE-OXIDE(GGO)-MOSFETS.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1984, Pages 88-91

  Ko, P K ^a   Tam, S ^a   Hu, C ^a   Wong, S S ^a   Sodini, C G ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

ENHANCEMENT OF HOT-ELECTRON CURRENTS; GATE-DRAIN (SOURCE) OVERLAP; GRADED-GATE-OXIDE (GGO); HOT-ELECTRON GENERATION;

SEMICONDUCTOR DEVICES, MOSFET;

ENHANCEMENT OF HOT-ELECTRON CURRENTS; GATE-DRAIN (SOURCE) OVERLAP; GRADED-GATE-OXIDE (GGO); HOT-ELECTRON GENERATION;

EID: 0021640151     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1984.190649     Document Type: Conference Paper

References (7)