STUDY OF THE RELATION BETWEEN DEVICE LOW-FREQUENCY NOISE AND OSCILLATOR PHASE NOISE FOR GaAs MESFETs.

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 1984, Pages 267-269

  Rohdin, Hans ^a   Su, Chung Yi ^a   Stolte, Charles ^a  

^a HEWLETT PACKARD LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

OSCILLATORS - MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; TRANSISTORS, FIELD EFFECT - APPLICATIONS;

LOW-FREQUENCY (LF) NOISE; METAL SEMICONDUCTOR FIELD EFFECT TRANSISTOR (MESFET); PHASE NOISE REDUCTION; RESIDUAL LF NOISE;

OSCILLATORS, MICROWAVE;

EID: 0021629574     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)