Experimental Determination of Single-Event Upset (SEU) as a Function of Collected Charge in Bipolar Integrated Circuits

IEEE Transactions on Nuclear Science

Volumn 31, Issue 6, 1984, Pages 1167-1174

  Zoutendyk, J A ^a   Malone, C J ^a   Smith, L S ^b  

^a Jet Propulsion Laboratory California Institute of Technology ^*

^b CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DATA STORAGE, DIGITAL - RANDOM ACCESS; IONS; TRANSISTORS, BIPOLAR - RADIATION EFFECTS;

BIPOLAR INTEGRATED CIRCUITS; CHARGE COLLECTION; SINGLE-EVENT UPSETS;

INTEGRATED CIRCUITS;

EID: 0021621285     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1984.4333476     Document Type: Article

References (8)

1. J.A. Zoutendyk, “Modeling of Single-Event Upset in Bipolar Integrated Circuits,” IEEE Transactions on Nuclear Science, Vol. NS-30, No. 6, pp. 4540–4545, December 1983.
2. O. von Roos and J. Zoutendyk, The Physics of Single-Event Upset in Integrated Circuits: A Review and a Critique of Analytical Models for Charge Collection, Publication 83–79, Pasadena, California, Jet Propulsion Laboratory, October 15, 1983.
3. See Figure 2, Reference 1, and add QB4 and QS4.
4. See Figure 3(b), Reference 1, and add QB4 QS4, IB4 IS4 and RBS; see also Figure 7, Reference 1
5. L.C. Northeliffe and R.F. Schilling, “Range and Stopping-Power Tables for Heavy Ions,” Nuclear Data Tables, Section A, Vol. 7, Nos. 3–4, Academic Press, New York, January 1970.
6. The 2901B microprocessor chip is a product of Advanced Micro Devices, Inc., Sunnyvale, California.
7. B. Smith, Ion Implantation Range Dat a for Silicon and Germanium Device Technologies, Forest Grove, Oregon, Research Studies Press, Inc., 1977.
8. C.M. Hsieh et al., “Collection of Charge from Alpha-Particle Tracks in Silicon Devices,” IEEE Transactions on Electron Devices Vol. ED-30, No. 6, pp. 686–693, June 1983.