C-BAND 10 WATT GaAs POWER FET.

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 1984, Pages 439-440

  Fukaya, J ^a   Ishii, M ^a   Matsumoto, M ^a   Hirano, Y ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS;

C-BAND APPLICATION; DEVICE PARAMETER OPTIMIZATION; HIGH POWER GALLIUM ARSENIDE FET; INTERNALLY MATCHING DEVICE; LOW SOURCE RESISTANCE; TWO-CHIP DEVICE;

TRANSISTORS, FIELD EFFECT;

EID: 0021609029     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (1)