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Volumn 19, Issue 6, 1984, Pages 1014-1021

A Precision CMOS Bandgap Reference

Author keywords

[No Author keywords available]

Indexed keywords

RESISTORS; SEMICONDUCTOR DEVICES, MOS; SEMICONDUCTOR DIODES; TRANSISTORS, BIPOLAR;

EID: 0021601680     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1984.1052260     Document Type: Article
Times cited : (35)

References (14)
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  • 3
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    • A simple three-terminal IC bandgap reference
    • Dec.
    • A. P. Brokaw, “A simple three-terminal IC bandgap reference,” IEEE J. Solid-State Circuits, vol. SC-9, pp. 388–393, Dec. 1974.
    • (1974) IEEE J. Solid-State Circuits , vol.SC-9 , pp. 388-393
    • Brokaw, A.P.1
  • 6
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    • MOS transistors operated in the lateral bipolar mode and their application in CMOS technology
    • June
    • E. Vittoz, “MOS transistors operated in the lateral bipolar mode and their application in CMOS technology,” IEEE J. Solid-State Circuits, vol. SC-18, June 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18
    • Vittoz, E.1
  • 7
    • 77949598388 scopus 로고
    • A precision curvature-compensated CMOS bandgap reference
    • Feb.
    • B. S. Song and P. R. Gray, “A precision curvature-compensated CMOS bandgap reference,” in ISSCC Dig. Tech. Papers, vol. 26, Feb. 1983, pp. 240–241.
    • (1983) ISSCC Dig. Tech. Papers , vol.26 , pp. 240-241
    • Song, B.S.1    Gray, P.R.2
  • 8
    • 0015639733 scopus 로고
    • A precision reference voltage source
    • June
    • K. Kuijk, “A precision reference voltage source,” IEEE J. Solid-State Circuits, vol. SC-8, pp. 222–226, June 1973.
    • (1973) IEEE J. Solid-State Circuits , vol.SC-8 , pp. 222-226
    • Kuijk, K.1
  • 9
    • 0020476509 scopus 로고
    • Bandgap voltage reference sources in CMOS technology
    • Jan.
    • Y. P. Tsividis, “Accurate analysis of temperature effects in Ic- Vbe characteristics with applications to bandgap reference devices,” IEEE J. Solid-State Circuits, vol. SC-15, pp. 1076–1084, Dec. 1980.
    • (1982) Electron. Lett. , vol.18 , Issue.1 , pp. 24-25
    • Ye, R.1    Tsividis, Y.2
  • 10
    • 0019291553 scopus 로고
    • Accurate analysis of temperature effects in Ic- Vbe characteristics with applications to bandgap reference devices
    • Dec.
    • R. Ye and Y. Tsividis, “Bandgap voltage reference sources in CMOS technology,” Electron. Lett., vol. 18, no. 1, pp. 24–25, Jan. 1982.
    • (1980) IEEE J. Solid-State Circuits , vol.SC-15 , pp. 1076-1084
    • Tsividis, Y.P.1
  • 11
    • 0017453673 scopus 로고
    • A review of some charge transport properties of silicon
    • C. Jacobini et al., “A review of some charge transport properties of silicon,” Solid-State Electron., vol. 20,p. 77, 1977.
    • (1977) Solid-State Electron. , vol.20 , pp. 77
    • Jacobini, C.1
  • 12
    • 0004005306 scopus 로고
    • Physics of Semiconductor Devices
    • 2nd ed. New York: Wiley
    • S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
    • (1981)
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  • 13
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    • Feb.
    • V. R. Saari, “Low-power high-drive CMOS operational amplifiers,” IEEE J. Solid-State Circuits, vol. SC-18, pp. 121–127, Feb. 1983.
    • (1983) IEEE J. Solid-State Circuits , vol.SC-18 , pp. 121-127
    • Saari, V.R.1
  • 14
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    • A low-noise chopper-stabilized differential switched-capacitor filtering technique
    • Feb.
    • K. C. Hsiech and P. R. Gray, “A low-noise chopper-stabilized differential switched-capacitor filtering technique,” in ISSCC Dig. Tech. Papers, vol. 24, Feb. 1981, pp. 128-129.
    • (1981) ISSCC Dig. Tech. Papers , vol.24 , pp. 128-129
    • Hsiech, K.C.1    Gray, P.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.