Random Error Effects in Matched MOS Capacitors and Current Sources

IEEE Journal of Solid-State Circuits

Volumn 19, Issue 6, 1984, Pages 948-956

  Shyu, Jyn Bang ^a   Temes, Gabor C ^b   Krummenacher, Francois ^c  

^a American Microsystems Inc   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

DATA CONVERSION, DIGITAL TO ANALOG; INTEGRATED CIRCUITS, LSI; MATHEMATICAL TECHNIQUES - ERROR ANALYSIS; SEMICONDUCTOR DEVICES, MOS; STATISTICAL METHODS;

CURRENT SOURCES; MATCHED MOS CAPACITORS; RANDOM ERROR EFFECTS;

CAPACITORS;

EID: 0021586347     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1984.1052250     Document Type: Article

References (15)

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