USE OF A CRYOGENIC CURRENT COMPARATOR TO DETERMINE THE QUANTIZED HALL RESISTANCE IN A SILICON MOSFET.

National Bureau of Standards, Special Publication

Volumn , Issue , 1984, Pages 543-548

  Hartland, A ^a  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

CURRENT COMPARATORS; QUANTIZED HALL RESISTANCE; RESISTANCE RATIO BRIDGE;

HALL EFFECT;

EID: 0021574318     PISSN: 00831883     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)