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Volumn 56, Issue 5, 1984, Pages 1522-1531

Computer simulation of a CF4 plasma etching silicon

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING - COMPUTER SIMULATION; FLUOROHYDROCARBONS; PLASMAS - APPLICATIONS;

EID: 0021494806     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.334108     Document Type: Article
Times cited : (152)

References (38)
  • 31
    • 84951375494 scopus 로고
    • [private communication of RRKM calculations of homogeneous [formula omitted] recombination as a function of pressure and temperature based on molecular parameters and unpublished data from their laboratory
    • (1980)
    • Rossi, M.1    Golden, D.M.2
  • 36
    • 0004320907 scopus 로고    scopus 로고
    • Discharge Processes in the Oxygen Plasma
    • Rept. AFIT/DS/78-3, Air Force Institute of Technology, Wright Patterson AFB, Ohio 45433.
    • Dettmer, J.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.