Measurement of Hole Leakage and Impact Ionization Currents in Bistable Metal-Tunnel-Oxide-Semiconductor Junctions

IEEE Transactions on Electron Devices

Volumn 31, Issue 9, 1984, Pages 1168-1174

  Fossum, Eric R ^a   Barker, Richard CLARK ^b  

^a Och Spine at New York Presbyterian Hospitals   (United States)

^b YALE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; IONIZATION - MEASUREMENTS;

BISTABLE METAL-TUNNEL-OXIDE-SEMICONDUCTOR JUNCTIONS; HOLE LEAKAGE; IMPACT IONIZATION;

SEMICONDUCTOR DEVICES;

EID: 0021483434     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21683     Document Type: Article

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