A Technique for the Design of Microwave Transistor Oscillators

IEEE Transactions on Microwave Theory and Techniques

Volumn 32, Issue 7, 1984, Pages 719-721

  Kotzebue, K L ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS, MICROWAVE - OPTIMIZATION; TRANSISTORS - APPLICATIONS;

SILICON BIPOLAR TRANSISTOR TEST OSCILLATOR;

OSCILLATORS, MICROWAVE;

EID: 0021461532     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/TMTT.1984.1132763     Document Type: Article

References (4)

1. Y. Takayama, “A new load-pull characterization method for microwave power transistors,” in 1976 IEEE MTT-S Symp. Dig. of Papers.
2. K. L. Kotzebue and W. J. Parrish, “The use of large-signal S-parameters in microwave oscillator design,” in Proc. 1975 IEEE Int. Symp. on Circuits and Syst., Apr. 1975.
3. K. Johnson, “Large-signal GaAs MESFET oscillator design,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 217–227, Mar: 1979.
4. R. J. Gilmore and F. J. Rosenbaum, “GaAs MESFET oscillator design using large-signal S-parameters,” in 1983 IEEE MTT-S Symp. Dig. of Papers, pp. 279–281.