-
1
-
-
0016603377
-
Confined carrier quantum states in ultrathin semiconductor heterostructures
-
R. Dingle, “Confined carrier quantum states in ultrathin semiconductor heterostructures,” in Festkorperprobleme XV, H. J.Queisser, Ed. New York: Pergamon, 1975, pp. 21–48
-
(1975)
Festkorperprobleme XV H. J.
, pp. 21-48
-
-
Dingle, R.1
-
2
-
-
0018983630
-
Quantum-well heterostructure lasers
-
Feb
-
N. Holonyak, Jr., R. M. Kolbas, R. D. Dupuis, and P. D. Dapkus, “Quantum-well heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-16, pp. 170–186, Feb. 1980.
-
(1980)
IEEE J. Quantum Electron.
, vol.QE-16
, pp. 170-186
-
-
Holonyak, N.1
Kolbas, R.M.2
Dupuis, R.D.3
Dapkus, P.D.4
-
3
-
-
0001362308
-
Extremely low threshold (AlGa)As graded-index waveguide separate-confinement hetero structure lasers grown by molecular beam epitaxy
-
Feb
-
W. T. Tsang, “Extremely low threshold (AlGa)As graded-index waveguide separate-confinement hetero structure lasers grown by molecular beam epitaxy,” Appl Phys. Lett., vol. 40, pp. 217–219, Feb. 1982.
-
(1982)
Appl Phys. Lett.
, vol.40
, pp. 217-219
-
-
Tsang, W.T.1
-
4
-
-
0020185836
-
Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE
-
Sept
-
S. D. Harsee, M. Baldy, P. Assenat, B. de Cremoux, and J. P. Duchemin, “Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE,” Electron. Lett., vol. 18, pp. 870–871, Sept. 1982.
-
(1982)
Electron. Lett.
, vol.18
, pp. 870-871
-
-
Harsee, S.D.1
Baldy, M.2
Assenat, P.3
de Cremoux, B.4
Duchemin, J.P.5
-
5
-
-
0020478401
-
Low-threshold single quantum well (60A) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
-
Dec
-
R. D. Burnham, W. Streifer, D. R. Scifres, C. Lindstrom, T. L. Paoli, and N. Holonyak, Jr., “Low-threshold single quantum well (60A) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant,” Electron. Lett., vol. 18, pp. 1095–1097, Dec. 1982.
-
(1982)
Electron. Lett.
, vol.18
, pp. 1095-1097
-
-
Burnham, R.D.1
Streifer, W.2
Scifres, D.R.3
Lindstrom, C.4
Paoli, T.L.5
Holonyak, N.6
-
6
-
-
84944376563
-
GaAs-GaAlAs GRIN-SCH laser grown by MBE
-
T. Fujii S. Yamakoshi, O. Wada, T. Sakurai, and S. Hiyamizu, “GaAs-GaAlAs GRIN-SCH laser grown by MBE” (in Japanese), in Nat. Conv. Rec. Appl. Phys. Soc. Japan, Sept. 1983.
-
(1983)
(in Japanese), in Nat. Conv. Rec. Appl. Phys. Soc. Japan
-
-
Fujii, T.1
Yamakoshi, S.2
Wada, O.3
Sakurai, T.4
Hiyamizu, S.5
-
7
-
-
0012266823
-
Temperature dependence of threshold current for quantum-well AlxGai_xAs-GaAs heterostructure laser diodes
-
Jan
-
R. Chin, N. Holonyak, Jr., B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, “Temperature dependence of threshold current for quantum-well AlxGai_xAs-GaAs heterostructure laser diodes,” Appl Phys. Lett., vol. 36, pp. 19–21, Jan. 1980.
-
(1980)
Appl Phys. Lett.
, vol.36
, pp. 19-21
-
-
Chin, R.1
Holonyak, N.2
Vojak, B.A.3
Hess, K.4
Dupuis, R.D.5
Dapkus, P.D.6
-
8
-
-
0021093871
-
Dynamic behaviour of a GaAs-GaAlAs MQW laser diode
-
Mar
-
H. Iwamura, T. Saku, T. Ishibashi, K. Otsuka, and Y. Horikoshi, “Dynamic behaviour of a GaAs-GaAlAs MQW laser diode,” Electron. Lett., vol. 19, pp. 180–181, Mar. 1983.
-
(1983)
Electron. Lett.
, vol.19
, pp. 180-181
-
-
Iwamura, H.1
Saku, T.2
Ishibashi, T.3
Otsuka, K.4
Horikoshi, Y.5
-
9
-
-
0019014520
-
Temperature dependence of threshold current for coupled multiple quantum-well Ini_xGaxP1_z Asz-InP heterostructure laser diodes
-
May
-
E. A. Rezek, N. Holonyak, Jr., and B. K. Fuller, “Temperature dependence of threshold current for coupled multiple quantum-well Ini_xGaxP1_z Asz-InP heterostructure laser diodes,” J. Appl. Phys., vol. 51, pp. 2402–2405, May 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2402-2405
-
-
Rezek, E.A.1
Holonyak, N.2
Fuller, B.K.3
-
10
-
-
0345858095
-
1.5˜1.6μm Ga0.47In0.53As/Al0.48ln0.52As multiquantum well lasers grown by molecular beam epitaxy
-
H. Temkin, K. Alavi, W. R. Wagner, T. P. Pearsall, and A. Y. Cho, “1.5~1.6μm Ga0.47In0.53As/Al0.48ln0.52As multiquantum well lasers grown by molecular beam epitaxy,” Appl Phys. Lett., vol. 42, pp. 845–847, May 1983.
-
(1983)
Appl Phys. Lett.
, vol.42
, pp. 845-847
-
-
Temkin, H.1
Alavi, K.2
Wagner, W.R.3
Pearsall, T.P.4
Cho, A.Y.5
-
11
-
-
0020802851
-
1.3 pm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
-
Aug
-
T. Yanase, Y. Kato, I. Mito, M. Yamaguchi, K. Nishi, K. Kobayashi, and R. Lang, “1.3 pm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy,” Electron. Lett., vol. 19, pp. 700–701, Aug. 1983.
-
(1983)
Electron. Lett
, vol.19
, pp. 700-701
-
-
Yanase, T.1
Kato, Y.2
Mito, I.3
Yamaguchi, M.4
Nishi, K.5
Kobayashi, K.6
Lang, R.7
-
12
-
-
0020207801
-
Calculated threshold current of GaAs quantum well lasers
-
Nov
-
N. K. Dutta, “Calculated threshold current of GaAs quantum well lasers,” J. Appl. Phys., vol. 53, pp. 7211–7214, Nov. 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 7211-7214
-
-
Dutta, N.K.1
-
13
-
-
0020767311
-
Auger recombination effect on threshold current of InGaAsP quantum well lasers
-
June
-
A. Sugimura, “Auger recombination effect on threshold current of InGaAsP quantum well lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 932–941, June 1983.
-
(1983)
IEEE J. Quantum Electron.
, vol.QE-19
, pp. 932-941
-
-
Sugimura, A.1
-
14
-
-
0020766514
-
Graded barrier single quantum well lasers—Theory and experiment
-
June
-
D. Kasemset, C. S. Hong, N. B. Patel, and P. D. Dapkus, “Graded barrier single quantum well lasers—Theory and experiment,” IEEE J. Quantum Electron., vol. QE-19, pp. 1025–1030, June 1983.
-
(1983)
IEEE J. Quantum Electron.
, vol.QE-19
, pp. 1025-1030
-
-
Kasemset, D.1
Hong, C.S.2
Patel, N.B.3
Dapkus, P.D.4
-
15
-
-
0015673029
-
Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser
-
Oct
-
Y. Nishimura and Y. Nishimura, “Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser,” IEEE J. Quantum Electron., vol. QE-9, pp. 1011–1019, Oct. 1973.
-
(1973)
IEEE J. Quantum Electron.
, vol.QE-9
, pp. 1011-1019
-
-
Nishimura, Y.1
Nishimura, Y.2
-
16
-
-
0019552980
-
Analysis of gain suppression in undoped injection lasers
-
Apr
-
M. Yamada and Y. Suematsu, “Analysis of gain suppression in undoped injection lasers,” J. Appl. Phys.,vol. 52, pp. 2653–2664, Apr. 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 2653-2664
-
-
Yamada, M.1
Suematsu, Y.2
-
17
-
-
0019315580
-
Nonxadiative carrier loss and temperature sensitivity of threshold current in 1.27 μm (GaIn)(AsP)/InP D. H. lasers
-
Jan
-
G.H.B. Thompson and G. D. Henshall, “Nonxadiative carrier loss and temperature sensitivity of threshold current in 1.27μm (GaIn)(AsP)/InP D. H. lasers,” Electron. Lett., vol. 16, pp. 42–44, Jan. 1980.
-
(1980)
Electron. Lett.
, vol.16
, pp. 42-44
-
-
Thompson, G.H.B.1
Henshall, G.D.2
-
18
-
-
0019018198
-
Band-to-band Auger recombination effect on InGaAsP laser threshold
-
May
-
A. Sugimura, “Band-to-band Auger recombination effect on InGaAsP laser threshold,” IEEE J. Quantum Electron., vol. QE-17, pp. 627–635, May 1981.
-
(1981)
IEEE J. Quantum Electron.
, vol.QE-17
, pp. 627-635
-
-
Sugimura, A.1
-
19
-
-
21544447340
-
Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination
-
Mar
-
N. K. Dutta and R. J. Nelson, “Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination,” Appl. Phys. Lett., vol. 38. pp. 407–409, Mar. 1981.
-
(1981)
Appl. Phys. Lett.
, vol.38
, pp. 407-409
-
-
Dutta, N.K.1
Nelson, R.J.2
-
20
-
-
21544438831
-
Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity
-
Feb
-
T. Uji, K. Iwamoto, and R. Lang, “Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity,” Appl Phys. Lett., vol. 38, pp. 193–195, Feb. 1981.
-
(1981)
Appl Phys. Lett.
, vol.38
, pp. 193-195
-
-
Uji, T.1
Iwamoto, K.2
Lang, R.3
-
21
-
-
84933258108
-
The temperature dependence of the efficiency and threshold current of Ini-xGaxAsyPi-y lasers related to intervalence band absorption
-
Oct
-
A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, “The temperature dependence of the efficiency and threshold current of Ini-xGaxAsyPi-y lasers related to intervalence band absorption,” Japan. J. Appl Phys., vol. 19„ pp. L621-L624, Oct. 1980.
-
(1980)
Japan. J. Appl Phys.
, vol.19
, pp. L621-L624
-
-
Adams, A.R.1
Asada, M.2
Suematsu, Y.3
Arai, S.4
-
22
-
-
0019019134
-
The temperature dependence of the threshold current of GalnAsP/InP DH lasers
-
May
-
M. Asada, A. R. Adams, K. E. Stubkjaer, Y, Suematsu, Y. Itaya, and S. Arai, “The temperature dependence of the threshold current of GalnAsP/InP DH lasers,” IEEE J. Quantum Electron., vol. QE-17, pp. 611–619, May 1981
-
(1981)
IEEE J. Quantum Electron.
, vol.QE-17
, pp. 611-619
-
-
Asada, M.1
Adams, A.R.2
Stubkjaer, K.E.3
Suematsu, Y.4
Itaya, Y.5
Arai, S.6
-
23
-
-
0019045269
-
Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers
-
Aug
-
M. Yano, H. Nishi, and M. Takusagawa, “Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers,” J. Appl Phys., vol. 51, pp. 4022–4028, Aug. 1980.
-
(1980)
J. Appl Phys.
, vol.51
, pp. 4022-4028
-
-
Yano, M.1
Nishi, H.2
Takusagawa, M.3
-
24
-
-
21544440695
-
Direct observation of electron leakage in InGaAsP/InP double heterostructure
-
Jan
-
S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, “Direct observation of electron leakage in InGaAsP/InP double heterostructure,” Appl. Phys. Lett., vol. 40, pp. 144–146, Jan. 1982.
-
(1982)
Appl. Phys. Lett.
, vol.40
, pp. 144-146
-
-
Yamakoshi, S.1
Sanada, T.2
Wada, O.3
Umebu, I.4
Sakurai, T.5
-
25
-
-
0020718889
-
Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers
-
Mar
-
N. K. Dutta, “Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers,” J. Appl. Phys., vol. 54, pp. 1236–1245, Mar. 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 1236-1245
-
-
Dutta, N.K.1
-
26
-
-
0020191034
-
Auger recombination in quantum-well InGaAsP heterostructure lasers
-
Oct
-
L. C. Chiu and A. Yariv, “Auger recombination in quantum-well InGaAsP heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-18, pp. 1406–1409, Oct. 1982.
-
(1982)
IEEE J. Quantum Electron.
, vol.QE-18
, pp. 1406-1409
-
-
Chiu, L.C.1
Yariv, A.2
-
27
-
-
0004258361
-
-
New York: Wiley
-
See, for example, C. Kittel, Quantum Theory of Solids. New York: Wiley, 1963, ch. 14, pp. 286–290.
-
(1963)
Quantum Theory of Solids.
, pp. 286-290
-
-
Kittel, C.1
-
28
-
-
30244514592
-
Band structure of indium antimonide
-
E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids, vol. 1, pp. 249–261, 1957.
-
(1957)
J. Phys. Chem. Solids
, vol.1
, pp. 249-261
-
-
Kane, E.O.1
-
29
-
-
0021093870
-
Polarisationdependent gain-current relationship in GaAs-AlGaAs MQW laser diodes
-
Mar
-
H. Kobayashi, H. Iwamura, T. Saku, and K. Otsuka, “Polarisationdependent gain-current relationship in GaAs-AlGaAs MQW laser diodes,”Electron. Lett, vol. 19, pp. 166–168, Mar. 1983.
-
(1983)
Electron. Lett
, vol.19
, pp. 166-168
-
-
Kobayashi, H.1
Iwamura, H.2
Saku, T.3
Otsuka, K.4
-
30
-
-
36749115637
-
An experimental determination of the effective masses for GaxIn1-xAsyP1-y alloys grown on InP
-
Apr
-
R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier, and T. P. Pearsall, “An experimental determination of the effective masses for GaxIn1-xAsyP1-y alloys grown on InP,” Appl Phys. Lett, vol. 34, pp. 492–494, Apr. 1979.
-
(1979)
Appl Phys. Lett
, vol.34
, pp. 492-494
-
-
Nicholas, R.J.1
Portal, J.C.2
Houlbert, C.3
Perrier, P.4
Pearsall, T.P.5
-
31
-
-
0019227181
-
Calculated absorption, emission, and gain in In0 72Ga0.28As06P0.6
-
N. K. Dutta, “Calculated absorption, emission, and gain in In072Ga0.28As0.6P0.6” J. Appl Phys., vol. 51, pp. 6095–6100, Dec. 1981
-
(1981)
J. Appl Phys.
, vol.51
, pp. 6095-6100
-
-
Dutta, N.K.1
-
32
-
-
84956275864
-
GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors at 1.3 μm wavelength
-
Feb
-
K. Utaka, Y, Suematsu, K. Kobayashi, and H. Kawanishi, “GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors at 1.3μm wavelength,” Japan. J. Appl Phys., vol. 19, pp. L137-L140, Feb. 1980.
-
(1980)
Japan. J. Appl Phys.
, vol.19
, pp. L137-L140
-
-
Utaka, K.1
Suematsu, Y.2
Kobayashi, K.3
Kawanishi, H.4
-
34
-
-
0019533253
-
Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
-
Feb
-
Y. Yamazoe, T, Nishino, and Y. Hamakawa, “Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP,” IEEE J. Quantum Electron., vol. QE-17, pp. 139–144, Feb. 1981.
-
(1981)
IEEE J. Quantum Electron.
, vol.QE-17
, pp. 139-144
-
-
Yamazoe, Y.1
Nishino, T.2
Hamakawa, Y.3
-
35
-
-
84944379383
-
Intervalence-band light absorption in 1.3 μm and 1.5 μm InGaAsP lasers
-
Nov
-
K. Nonomura, M. Yamanishi, I. Suemune, and N. Mikoshiba, “Intervalence-band light absorption in 1.3μm and 1.5μm InGaAsP lasers” (in Japanese), IECE Japan, Tech. Res. Rep. OQE 82–72, Nov. 1982.
-
(1982)
(in Japanese), IECE Japan, Tech. Res. Rep. OQE 82–72
-
-
Nonomura, K.1
Yamanishi, M.2
Suemune, I.3
Mikoshiba, N.4
-
36
-
-
0020764060
-
The effect of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 μm GalnAsP/InP lasers
-
June
-
M. Asada and Y. Suematsu, “The effect of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6μm GalnAsP/InP lasers,” IEEE J, Quantum Electron, vol. QE-19, pp. 917–923, June 1983.
-
(1983)
IEEE J, Quantum Electron
, vol.QE-19
, pp. 917-923
-
-
Asada, M.1
Suematsu, Y.2
-
37
-
-
0019601506
-
Spontaneous recombination, gain and refractive index variation for 1.6 μm wavelength InGaAsP/InP lasers
-
Aug
-
K. Stubkjaer, M. Asada, S. Arai, and Y. Suematsu, “Spontaneous recombination, gain and refractive index variation for 1.6μm wavelength InGaAsP/InP lasers,” Japan J. Appl. Phys., vol. 20, pp. 1499–1505, Aug. 1981.
-
(1981)
Japan J. Appl. Phys.
, vol.20
, pp. 1499-1505
-
-
Stubkjaer, K.1
Asada, M.2
Arai, S.3
Suematsu, Y.4
-
38
-
-
0003464333
-
Electronic Structure and the Properties of the Solids—The Physics of the Chemical Bond
-
San Francisco, CA: Freeman
-
W. A. Harrison, Electronic Structure and the Properties of the Solids—The Physics of the Chemical Bond. San Francisco, CA: Freeman, 1980, ch. 10, pp. 252–256.
-
(1980)
, pp. 252-256
-
-
Harrison, W.A.1
-
39
-
-
0041148323
-
Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x ˜ 0.13, z ˜ 0.29) by quantum-well luminescence
-
June
-
R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, “Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x ~ 0.13, z ~ 0.29) by quantum-well luminescence,” Appl. Phys. Lett., vol. 34, pp. 862–863, June 1979.
-
(1979)
Appl. Phys. Lett.
, vol.34
, pp. 862-863
-
-
Chin, R.1
Holonyak, N.2
Kirchoefer, S.W.3
Kolbas, R.M.4
Rezek, E.A.5
-
40
-
-
36749120810
-
Band gap versus composition and demonstration of Vegard’s law for In1-xGaxAsyP1-y lattice matched to InP
-
Oct
-
R, E. Nahory, M. A. Pollack, W. D. Johnston, Jr., and R. L. Barns, “Band gap versus composition and demonstration of Vegard’s law for In1-xGaxAsyP1-y lattice matched to InP,” Appl Phys. Lett., vol. 33, pp. 659–661, Oct. 1978.
-
(1978)
Appl Phys. Lett.
, vol.33
, pp. 659-661
-
-
Nahory, R.E.1
Pollack, M.A.2
Johnston, W.D.3
Barns, R.L.4
-
41
-
-
0018919943
-
Estimation of the intraband relaxation time in undoped AlGaAs injection laser
-
Jan
-
M. Yamada, H. Ishiguro, and H. Nagato, “Estimation of the intraband relaxation time in undoped AlGaAs injection laser,” Japan. J. Appl Phys., vol, 19, pp. 135–142, Jan. 1980.
-
(1980)
Japan. J. Appl Phys.
, vol.19
, pp. 135-142
-
-
Yamada, M.1
Ishiguro, H.2
Nagato, H.3
-
42
-
-
0015387796
-
Propagation mode and scattering loss of two dimensional dielectric waveguide with gradual distribution of refractive index
-
Aug
-
Y. Suematsu and K. Furuya, “Propagation mode and scattering loss of two dimensional dielectric waveguide with gradual distribution of refractive index,” IEEE Trans. Microwave Theory Tech., vol. MTT-20, pp. 524–531, Aug. 1972.
-
(1972)
IEEE Trans. Microwave Theory Tech.
, vol.MTT-20
, pp. 524-531
-
-
Suematsu, Y.1
Furuya, K.2
|