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Volumn 20, Issue 7, 1984, Pages 745-753

Gain and Intervalence Band Absorption in Quantum-Well Lasers

Author keywords

[No Author keywords available]

Indexed keywords

LASERS, SEMICONDUCTOR;

EID: 0021458437     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/JQE.1984.1072464     Document Type: Article
Times cited : (422)

References (42)
  • 1
    • 0016603377 scopus 로고
    • Confined carrier quantum states in ultrathin semiconductor heterostructures
    • R. Dingle, “Confined carrier quantum states in ultrathin semiconductor heterostructures,” in Festkorperprobleme XV, H. J.Queisser, Ed. New York: Pergamon, 1975, pp. 21–48
    • (1975) Festkorperprobleme XV H. J. , pp. 21-48
    • Dingle, R.1
  • 3
    • 0001362308 scopus 로고
    • Extremely low threshold (AlGa)As graded-index waveguide separate-confinement hetero structure lasers grown by molecular beam epitaxy
    • Feb
    • W. T. Tsang, “Extremely low threshold (AlGa)As graded-index waveguide separate-confinement hetero structure lasers grown by molecular beam epitaxy,” Appl Phys. Lett., vol. 40, pp. 217–219, Feb. 1982.
    • (1982) Appl Phys. Lett. , vol.40 , pp. 217-219
    • Tsang, W.T.1
  • 4
    • 0020185836 scopus 로고
    • Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE
    • Sept
    • S. D. Harsee, M. Baldy, P. Assenat, B. de Cremoux, and J. P. Duchemin, “Very low threshold GRIN-SCH GaAs/GaAlAs laser structure grown by OM-VPE,” Electron. Lett., vol. 18, pp. 870–871, Sept. 1982.
    • (1982) Electron. Lett. , vol.18 , pp. 870-871
    • Harsee, S.D.1    Baldy, M.2    Assenat, P.3    de Cremoux, B.4    Duchemin, J.P.5
  • 5
    • 0020478401 scopus 로고
    • Low-threshold single quantum well (60A) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant
    • Dec
    • R. D. Burnham, W. Streifer, D. R. Scifres, C. Lindstrom, T. L. Paoli, and N. Holonyak, Jr., “Low-threshold single quantum well (60A) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant,” Electron. Lett., vol. 18, pp. 1095–1097, Dec. 1982.
    • (1982) Electron. Lett. , vol.18 , pp. 1095-1097
    • Burnham, R.D.1    Streifer, W.2    Scifres, D.R.3    Lindstrom, C.4    Paoli, T.L.5    Holonyak, N.6
  • 7
    • 0012266823 scopus 로고
    • Temperature dependence of threshold current for quantum-well AlxGai_xAs-GaAs heterostructure laser diodes
    • Jan
    • R. Chin, N. Holonyak, Jr., B. A. Vojak, K. Hess, R. D. Dupuis, and P. D. Dapkus, “Temperature dependence of threshold current for quantum-well AlxGai_xAs-GaAs heterostructure laser diodes,” Appl Phys. Lett., vol. 36, pp. 19–21, Jan. 1980.
    • (1980) Appl Phys. Lett. , vol.36 , pp. 19-21
    • Chin, R.1    Holonyak, N.2    Vojak, B.A.3    Hess, K.4    Dupuis, R.D.5    Dapkus, P.D.6
  • 9
    • 0019014520 scopus 로고
    • Temperature dependence of threshold current for coupled multiple quantum-well Ini_xGaxP1_z Asz-InP heterostructure laser diodes
    • May
    • E. A. Rezek, N. Holonyak, Jr., and B. K. Fuller, “Temperature dependence of threshold current for coupled multiple quantum-well Ini_xGaxP1_z Asz-InP heterostructure laser diodes,” J. Appl. Phys., vol. 51, pp. 2402–2405, May 1980.
    • (1980) J. Appl. Phys. , vol.51 , pp. 2402-2405
    • Rezek, E.A.1    Holonyak, N.2    Fuller, B.K.3
  • 10
    • 0345858095 scopus 로고
    • 1.5˜1.6μm Ga0.47In0.53As/Al0.48ln0.52As multiquantum well lasers grown by molecular beam epitaxy
    • H. Temkin, K. Alavi, W. R. Wagner, T. P. Pearsall, and A. Y. Cho, “1.5~1.6μm Ga0.47In0.53As/Al0.48ln0.52As multiquantum well lasers grown by molecular beam epitaxy,” Appl Phys. Lett., vol. 42, pp. 845–847, May 1983.
    • (1983) Appl Phys. Lett. , vol.42 , pp. 845-847
    • Temkin, H.1    Alavi, K.2    Wagner, W.R.3    Pearsall, T.P.4    Cho, A.Y.5
  • 11
    • 0020802851 scopus 로고
    • 1.3 pm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy
    • Aug
    • T. Yanase, Y. Kato, I. Mito, M. Yamaguchi, K. Nishi, K. Kobayashi, and R. Lang, “1.3 pm InGaAsP/InP multiquantum-well lasers grown by vapour-phase epitaxy,” Electron. Lett., vol. 19, pp. 700–701, Aug. 1983.
    • (1983) Electron. Lett , vol.19 , pp. 700-701
    • Yanase, T.1    Kato, Y.2    Mito, I.3    Yamaguchi, M.4    Nishi, K.5    Kobayashi, K.6    Lang, R.7
  • 12
    • 0020207801 scopus 로고
    • Calculated threshold current of GaAs quantum well lasers
    • Nov
    • N. K. Dutta, “Calculated threshold current of GaAs quantum well lasers,” J. Appl. Phys., vol. 53, pp. 7211–7214, Nov. 1982.
    • (1982) J. Appl. Phys. , vol.53 , pp. 7211-7214
    • Dutta, N.K.1
  • 13
    • 0020767311 scopus 로고
    • Auger recombination effect on threshold current of InGaAsP quantum well lasers
    • June
    • A. Sugimura, “Auger recombination effect on threshold current of InGaAsP quantum well lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 932–941, June 1983.
    • (1983) IEEE J. Quantum Electron. , vol.QE-19 , pp. 932-941
    • Sugimura, A.1
  • 14
    • 0020766514 scopus 로고
    • Graded barrier single quantum well lasers—Theory and experiment
    • June
    • D. Kasemset, C. S. Hong, N. B. Patel, and P. D. Dapkus, “Graded barrier single quantum well lasers—Theory and experiment,” IEEE J. Quantum Electron., vol. QE-19, pp. 1025–1030, June 1983.
    • (1983) IEEE J. Quantum Electron. , vol.QE-19 , pp. 1025-1030
    • Kasemset, D.1    Hong, C.S.2    Patel, N.B.3    Dapkus, P.D.4
  • 15
    • 0015673029 scopus 로고
    • Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser
    • Oct
    • Y. Nishimura and Y. Nishimura, “Spectral hole-burning and nonlinear-gain decrease in a band-to-level transition semiconductor laser,” IEEE J. Quantum Electron., vol. QE-9, pp. 1011–1019, Oct. 1973.
    • (1973) IEEE J. Quantum Electron. , vol.QE-9 , pp. 1011-1019
    • Nishimura, Y.1    Nishimura, Y.2
  • 16
    • 0019552980 scopus 로고
    • Analysis of gain suppression in undoped injection lasers
    • Apr
    • M. Yamada and Y. Suematsu, “Analysis of gain suppression in undoped injection lasers,” J. Appl. Phys.,vol. 52, pp. 2653–2664, Apr. 1981.
    • (1981) J. Appl. Phys. , vol.52 , pp. 2653-2664
    • Yamada, M.1    Suematsu, Y.2
  • 17
    • 0019315580 scopus 로고
    • Nonxadiative carrier loss and temperature sensitivity of threshold current in 1.27 μm (GaIn)(AsP)/InP D. H. lasers
    • Jan
    • G.H.B. Thompson and G. D. Henshall, “Nonxadiative carrier loss and temperature sensitivity of threshold current in 1.27μm (GaIn)(AsP)/InP D. H. lasers,” Electron. Lett., vol. 16, pp. 42–44, Jan. 1980.
    • (1980) Electron. Lett. , vol.16 , pp. 42-44
    • Thompson, G.H.B.1    Henshall, G.D.2
  • 18
    • 0019018198 scopus 로고
    • Band-to-band Auger recombination effect on InGaAsP laser threshold
    • May
    • A. Sugimura, “Band-to-band Auger recombination effect on InGaAsP laser threshold,” IEEE J. Quantum Electron., vol. QE-17, pp. 627–635, May 1981.
    • (1981) IEEE J. Quantum Electron. , vol.QE-17 , pp. 627-635
    • Sugimura, A.1
  • 19
    • 21544447340 scopus 로고
    • Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination
    • Mar
    • N. K. Dutta and R. J. Nelson, “Temperature dependence of threshold of InGaAsP/InP double-heterostructure lasers and Auger recombination,” Appl. Phys. Lett., vol. 38. pp. 407–409, Mar. 1981.
    • (1981) Appl. Phys. Lett. , vol.38 , pp. 407-409
    • Dutta, N.K.1    Nelson, R.J.2
  • 20
    • 21544438831 scopus 로고
    • Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity
    • Feb
    • T. Uji, K. Iwamoto, and R. Lang, “Nonradiative recombination in InGaAsP/InP light sources causing light emitting diode saturation and strong laser-threshold-current temperature sensitivity,” Appl Phys. Lett., vol. 38, pp. 193–195, Feb. 1981.
    • (1981) Appl Phys. Lett. , vol.38 , pp. 193-195
    • Uji, T.1    Iwamoto, K.2    Lang, R.3
  • 21
    • 84933258108 scopus 로고
    • The temperature dependence of the efficiency and threshold current of Ini-xGaxAsyPi-y lasers related to intervalence band absorption
    • Oct
    • A. R. Adams, M. Asada, Y. Suematsu, and S. Arai, “The temperature dependence of the efficiency and threshold current of Ini-xGaxAsyPi-y lasers related to intervalence band absorption,” Japan. J. Appl Phys., vol. 19„ pp. L621-L624, Oct. 1980.
    • (1980) Japan. J. Appl Phys. , vol.19 , pp. L621-L624
    • Adams, A.R.1    Asada, M.2    Suematsu, Y.3    Arai, S.4
  • 23
    • 0019045269 scopus 로고
    • Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers
    • Aug
    • M. Yano, H. Nishi, and M. Takusagawa, “Temperature characteristics of threshold current in InGaAsP/InP double-heterostructure lasers,” J. Appl Phys., vol. 51, pp. 4022–4028, Aug. 1980.
    • (1980) J. Appl Phys. , vol.51 , pp. 4022-4028
    • Yano, M.1    Nishi, H.2    Takusagawa, M.3
  • 24
    • 21544440695 scopus 로고
    • Direct observation of electron leakage in InGaAsP/InP double heterostructure
    • Jan
    • S. Yamakoshi, T. Sanada, O. Wada, I. Umebu, and T. Sakurai, “Direct observation of electron leakage in InGaAsP/InP double heterostructure,” Appl. Phys. Lett., vol. 40, pp. 144–146, Jan. 1982.
    • (1982) Appl. Phys. Lett. , vol.40 , pp. 144-146
    • Yamakoshi, S.1    Sanada, T.2    Wada, O.3    Umebu, I.4    Sakurai, T.5
  • 25
    • 0020718889 scopus 로고
    • Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers
    • Mar
    • N. K. Dutta, “Calculation of Auger rates in a quantum well structure and its application to InGaAsP quantum well lasers,” J. Appl. Phys., vol. 54, pp. 1236–1245, Mar. 1983.
    • (1983) J. Appl. Phys. , vol.54 , pp. 1236-1245
    • Dutta, N.K.1
  • 26
    • 0020191034 scopus 로고
    • Auger recombination in quantum-well InGaAsP heterostructure lasers
    • Oct
    • L. C. Chiu and A. Yariv, “Auger recombination in quantum-well InGaAsP heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-18, pp. 1406–1409, Oct. 1982.
    • (1982) IEEE J. Quantum Electron. , vol.QE-18 , pp. 1406-1409
    • Chiu, L.C.1    Yariv, A.2
  • 27
    • 0004258361 scopus 로고
    • New York: Wiley
    • See, for example, C. Kittel, Quantum Theory of Solids. New York: Wiley, 1963, ch. 14, pp. 286–290.
    • (1963) Quantum Theory of Solids. , pp. 286-290
    • Kittel, C.1
  • 28
    • 30244514592 scopus 로고
    • Band structure of indium antimonide
    • E. O. Kane, “Band structure of indium antimonide,” J. Phys. Chem. Solids, vol. 1, pp. 249–261, 1957.
    • (1957) J. Phys. Chem. Solids , vol.1 , pp. 249-261
    • Kane, E.O.1
  • 29
    • 0021093870 scopus 로고
    • Polarisationdependent gain-current relationship in GaAs-AlGaAs MQW laser diodes
    • Mar
    • H. Kobayashi, H. Iwamura, T. Saku, and K. Otsuka, “Polarisationdependent gain-current relationship in GaAs-AlGaAs MQW laser diodes,”Electron. Lett, vol. 19, pp. 166–168, Mar. 1983.
    • (1983) Electron. Lett , vol.19 , pp. 166-168
    • Kobayashi, H.1    Iwamura, H.2    Saku, T.3    Otsuka, K.4
  • 30
    • 36749115637 scopus 로고
    • An experimental determination of the effective masses for GaxIn1-xAsyP1-y alloys grown on InP
    • Apr
    • R. J. Nicholas, J. C. Portal, C. Houlbert, P. Perrier, and T. P. Pearsall, “An experimental determination of the effective masses for GaxIn1-xAsyP1-y alloys grown on InP,” Appl Phys. Lett, vol. 34, pp. 492–494, Apr. 1979.
    • (1979) Appl Phys. Lett , vol.34 , pp. 492-494
    • Nicholas, R.J.1    Portal, J.C.2    Houlbert, C.3    Perrier, P.4    Pearsall, T.P.5
  • 31
    • 0019227181 scopus 로고
    • Calculated absorption, emission, and gain in In0 72Ga0.28As06P0.6
    • N. K. Dutta, “Calculated absorption, emission, and gain in In072Ga0.28As0.6P0.6” J. Appl Phys., vol. 51, pp. 6095–6100, Dec. 1981
    • (1981) J. Appl Phys. , vol.51 , pp. 6095-6100
    • Dutta, N.K.1
  • 32
    • 84956275864 scopus 로고
    • GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors at 1.3 μm wavelength
    • Feb
    • K. Utaka, Y, Suematsu, K. Kobayashi, and H. Kawanishi, “GaInAsP/InP integrated twin-guide lasers with first-order distributed Bragg reflectors at 1.3μm wavelength,” Japan. J. Appl Phys., vol. 19, pp. L137-L140, Feb. 1980.
    • (1980) Japan. J. Appl Phys. , vol.19 , pp. L137-L140
    • Utaka, K.1    Suematsu, Y.2    Kobayashi, K.3    Kawanishi, H.4
  • 33
  • 34
    • 0019533253 scopus 로고
    • Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP
    • Feb
    • Y. Yamazoe, T, Nishino, and Y. Hamakawa, “Electroreflectance study of InGaAsP quaternary alloys lattice matched to InP,” IEEE J. Quantum Electron., vol. QE-17, pp. 139–144, Feb. 1981.
    • (1981) IEEE J. Quantum Electron. , vol.QE-17 , pp. 139-144
    • Yamazoe, Y.1    Nishino, T.2    Hamakawa, Y.3
  • 36
    • 0020764060 scopus 로고
    • The effect of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6 μm GalnAsP/InP lasers
    • June
    • M. Asada and Y. Suematsu, “The effect of loss and nonradiative recombination on the temperature dependence of threshold current in 1.5-1.6μm GalnAsP/InP lasers,” IEEE J, Quantum Electron, vol. QE-19, pp. 917–923, June 1983.
    • (1983) IEEE J, Quantum Electron , vol.QE-19 , pp. 917-923
    • Asada, M.1    Suematsu, Y.2
  • 37
    • 0019601506 scopus 로고
    • Spontaneous recombination, gain and refractive index variation for 1.6 μm wavelength InGaAsP/InP lasers
    • Aug
    • K. Stubkjaer, M. Asada, S. Arai, and Y. Suematsu, “Spontaneous recombination, gain and refractive index variation for 1.6μm wavelength InGaAsP/InP lasers,” Japan J. Appl. Phys., vol. 20, pp. 1499–1505, Aug. 1981.
    • (1981) Japan J. Appl. Phys. , vol.20 , pp. 1499-1505
    • Stubkjaer, K.1    Asada, M.2    Arai, S.3    Suematsu, Y.4
  • 38
    • 0003464333 scopus 로고
    • Electronic Structure and the Properties of the Solids—The Physics of the Chemical Bond
    • San Francisco, CA: Freeman
    • W. A. Harrison, Electronic Structure and the Properties of the Solids—The Physics of the Chemical Bond. San Francisco, CA: Freeman, 1980, ch. 10, pp. 252–256.
    • (1980) , pp. 252-256
    • Harrison, W.A.1
  • 39
    • 0041148323 scopus 로고
    • Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x ˜ 0.13, z ˜ 0.29) by quantum-well luminescence
    • June
    • R. Chin, N. Holonyak, Jr., S. W. Kirchoefer, R. M. Kolbas, and E. A. Rezek, “Determination of the valence-band discontinuity of InP-In1-xGaxP1-zAsz (x ~ 0.13, z ~ 0.29) by quantum-well luminescence,” Appl. Phys. Lett., vol. 34, pp. 862–863, June 1979.
    • (1979) Appl. Phys. Lett. , vol.34 , pp. 862-863
    • Chin, R.1    Holonyak, N.2    Kirchoefer, S.W.3    Kolbas, R.M.4    Rezek, E.A.5
  • 40
    • 36749120810 scopus 로고
    • Band gap versus composition and demonstration of Vegard’s law for In1-xGaxAsyP1-y lattice matched to InP
    • Oct
    • R, E. Nahory, M. A. Pollack, W. D. Johnston, Jr., and R. L. Barns, “Band gap versus composition and demonstration of Vegard’s law for In1-xGaxAsyP1-y lattice matched to InP,” Appl Phys. Lett., vol. 33, pp. 659–661, Oct. 1978.
    • (1978) Appl Phys. Lett. , vol.33 , pp. 659-661
    • Nahory, R.E.1    Pollack, M.A.2    Johnston, W.D.3    Barns, R.L.4
  • 41
    • 0018919943 scopus 로고
    • Estimation of the intraband relaxation time in undoped AlGaAs injection laser
    • Jan
    • M. Yamada, H. Ishiguro, and H. Nagato, “Estimation of the intraband relaxation time in undoped AlGaAs injection laser,” Japan. J. Appl Phys., vol, 19, pp. 135–142, Jan. 1980.
    • (1980) Japan. J. Appl Phys. , vol.19 , pp. 135-142
    • Yamada, M.1    Ishiguro, H.2    Nagato, H.3
  • 42
    • 0015387796 scopus 로고
    • Propagation mode and scattering loss of two dimensional dielectric waveguide with gradual distribution of refractive index
    • Aug
    • Y. Suematsu and K. Furuya, “Propagation mode and scattering loss of two dimensional dielectric waveguide with gradual distribution of refractive index,” IEEE Trans. Microwave Theory Tech., vol. MTT-20, pp. 524–531, Aug. 1972.
    • (1972) IEEE Trans. Microwave Theory Tech. , vol.MTT-20 , pp. 524-531
    • Suematsu, Y.1    Furuya, K.2


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