Current-Voltage Characteristics of Thin-Film SOI MOSFET's in Strong Inversion

IEEE Transactions on Electron Devices

Volumn 31, Issue 4, 1984, Pages 401-408

  Lim, Hyung Kyu ^a   Fossum, Jerry G ^a  

^a UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0021405436     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21540     Document Type: Article

References (14)

1. H.-W. Lam, A. F. Tasch, Jr., and R. F. Pinizzotto, “Silicon-on- insulator for VLSI and VHSIC,” in VLSI Electronics: Microstructure Science, vol. 4. New York: Academic Press, 1982.
2. H.-W. Lam, A. F. Tasch, Jr., and T. C. Holloway, “Characteristics of MOSFET's fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrate,” IEEE Electron Device Lett., vol. EDL-1, pp. 206–208, Oct. 1980.
3. B.-Y. Tsaur, M. W. Geis, J.C.C. Fan, D. J. Silversmith, and P. W. Mountain, “n-Channel deep-depletion metal-oxide-semiconductor field-effect transistors fabricated in zone-melting-recrystallized polycrystalline Si films on SiO2,” Appl. Phys. Lett., vol. 39, pp. 909–911, Dec. 1981.
4. K. Izumi, M. Doken, and H. Ariyoshi, “CMOS devices fabricated on buried Si02 layers formed by oxygen implantation into silicon,” Electron. Lett., vol. 14, pp. 593–594, 1978.
5. E. R. Worley, “Theory of the fully depleted SOS/MOS transistor,” Solid-State Electron., vol. 23. pp. = 1107-1111,1980.
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7. P. W. Barth, P. R. Apte, and J. B. Angell, “The MISIM-FET in thin semiconductor layers: Depletion-approximation model of I-V characteristics,” IEEE Trans. Electron Devices, to be published.
8. H.-K. Lim and J. G. Fossum, “Threshold voltage of thin-film silicon-on-insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1244–1251, Oct. 1983.
9. J. Tihanyi and H. Schlotterer, “Properties of ESFI MOS transistors due to the floating substrate and the finite volume,” IEEE Trans. Electron Devices, vol. ED-22, pp. 1017–1023, Nov. 1975.
10. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
11. H.-W. Lam, private communication.
12. J. G. Fossum and A. Ortiz-Conde, “Effects of grain boundaries on the channel conductance of SOI MOSFET’s,” IEEE Trans. Electron Devices, vol. ED-30, pp. 933–940, Aug. 1983; also J. G. Fossum, A. Ortiz, H.-K. Lim, and H.-W. Lam, “Effects of grain boundaries on channel conduction in thin-film SOI MOSFET’s,” in SPIE Proc., vol. 385, Jan. 1983.
13. S. C. Sun and J. D. Plummer, “Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces,” IEEE Trans. Electron Devices, vol. ED-27, pp. 1497–1508, Aug. 1980.
14. Y. Kobayashi, A. Fukami, and T. Suzuki, “Zone-melting recrystallization of polycrystalline silicon films on fused silica substrates using RF heated carbon susceptor,” IEEE Electron Device Lett., vol. EDL-4, pp. 132–134, May 1983.