0.5 W 2-21 GHz monolithic GaAs distributed amplifier

Electronics Letters

Volumn 20, Issue 7, 1984, Pages 288-289

  Kim, B ^a   Tserng, H Q ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

Amplifiers; Semiconductor devices and materials

Indexed keywords

INTEGRATED CIRCUITS, MONOLITHIC;

DISTRIBUTED AMPLIFIERS;

AMPLIFIERS, MICROWAVE;

EID: 0021393525     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19840197     Document Type: Article

References (7)

1. ARCHER, J. A., PETZ, F. A., and WEIDLICH, H. P.: ‘GaAs FET distributed amplifier’, Electron. Lett., 1981, 17, p. 433
2. NWASGU, C., and AITCHISON, C. S.: ‘A very broadband microwave distributed amplifier using FETs’. 11th European Microwave Conference Proceedings, 1981, pp. 609-613
3. AYASLI, Y., REYNOLDS, L. D., VORHAUS, J. L., and HANES, L.: ‘Mono-lithic 2-20 GHz GaAs travelling-wave amplifier’, Electron. Lett., 1982, 18, pp. 596-598
4. STRID, E. W., and GLEASON, K. R.: ‘A DC-12 GHz monolithic GaAs FET distributed amplifier’, IEEE Trans., 1982, MTT-30, pp. 969-975
5. AYASLI, Y., et al.: ‘2-20 GHz GaAs travelling-wave power amplifier’. IEEE 1983 Microwave and Millimeter-wave Monolithic Circuit Symposium Digest, pp. 67-70
6. BEYER, J. B., BECKER, R. C., and NORDMAN, J. E.: ‘Wideband mono-lithic microwave amplifier study’. Annual Report, 1981, NRL Contract NOOO14-8O-C-O923
7. PODGORSKI, A. S., and WEI, L. Y.: ‘Theory of travelling-wave transistors’, IEEE Trans., 1982, ED-29, pp. 1845-1853