Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures part I: Theory

Microelectronics Reliability

Volumn 24, Issue 3, 1984, Pages 465-485

  Shoucair, F ^a   Hwang, W ^a   Jain, P ^b  

^a Department of Electrical Engineering Columbia University ^*  (United States)

^b Schlumberger Well Services Mail Stop 30 910 4001 Miranda Avenue Palo Alto CA 94304 United States of America ^*

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES, MOSFET - THEORY;

CHANNEL MOBILITY; ELECTRIC PARAMETERS; JUNCTION LEAKAGE CURRENTS; THRESHOLD VOLTAGE; ZERO TEMPERATURE COEFFICIENT (ZTC) GATE BIAS VOLTAGES;

INTEGRATED CIRCUITS, LSI;

EID: 0021290968     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/0026-2714(84)90475-X     Document Type: Article

References (23)

1. Semiconductors Face the '80s
2. Hybrid Microcircuitry for 300°C Operation
3. Extreme Temperature Range Microelectronics
4. Extension of High-Temperature Electronics
5. Temperature Dependence of n- type MOS Transistors
6. Temperature Effects in MOS Transistors
7. Electron and Hole Mobilities in Inversion Layers on Thermally Oxidized Silicon Surfaces
8. Investigation of Thermally Oxidised Silicon Surfaces Using Metal-Oxide-Semiconductor Structures
9. Influence de la Temperature sur les Dispositifs Semiconducteurs du Type M.O.S.
10. Temperature Dependence of MOS Transistor Characteristics Below Saturation
11. Temperature Dependence of the Saturation Current of MOST's
12. High Temperature MOSFET Characteristics for Geothermal Instrumentation
13. Fabrication of Passive Components for High-Temperature Instrumentation
14. Integrated Circuit Characteristics at 260°C for Aircraft Engine-Control Applications
15. Temperature Coefficient of Drift of MOS Transistors
16. Performance of Digital Integrated Circuit Technologies at Very High Temperatures
17. Threshold Voltage Variations with Temperature in MOS Transistors
18. Conductance of MOS Transistors in Saturation