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Volumn 31, Issue 1, 1984, Pages 113-120

Latchup Model for the Parasitic p-n-p-n Path in Bulk CMOS

Author keywords

[No Author keywords available]

Indexed keywords

LATCHUP MODEL;

EID: 0021201527     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1984.21484     Document Type: Article
Times cited : (42)

References (15)
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  • 5
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    • Proc. IRE
    • J. J. Eber, Proc. IRE, vol. 40, p.„1361, 1952.
    • (1952) , vol.40 , pp. 1361
    • Eber, J.J.1
  • 8
    • 0015770573 scopus 로고
    • Latchup in CMOS integrated circuits
    • B. L. Gregory and B. D. Shafer, “Latchup in CMOS integrated circuits,” IEEE Trans. Nucl. Sci., vol. NS-20, p. 293, 1973.
    • (1973) IEEE Trans. Nucl. Sci. , vol.NS-20 , pp. 293
    • Gregory, B.L.1    Shafer, B.D.2
  • 13
    • 84944983092 scopus 로고
    • Fundamentals of Silicon Integrated Device Technology, Vol. II
    • North Carolina: Res. Triangle Inst
    • J. R. Hauser, Fundamentals of Silicon Integrated Device Technology, Vol. II. North Carolina: Res. Triangle Inst., 1967.
    • (1967)
    • Hauser, J.R.1
  • 14
    • 84918948151 scopus 로고
    • Determination of physical parameters of diffusion and drift transistors
    • M. B. Das and A. R. Boothroyd, “Determination of physical parameters of diffusion and drift transistors,” IRE Trans. Electron Devices,vol. ED-8. p. 15, 1961.
    • (1961) IRE Trans. Electron Devices , vol.ED-8 , pp. 15
    • Das, M.B.1    Boothroyd, A.R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.