SILICON CARBIDE, A HIGH TEMPERATURE SEMICONDUCTOR.

CECON Record, Cleveland Electrical/Electronics Conference and Exposition

Volumn , Issue , 1983, Pages 28-32

  Powell, J Anthony ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH OF CUBIC; HIGH TEMPERATURE SEMICONDUCTOR DEVICES; POTENTIAL MATERIALS; SILICON CARBIDE POLYTYPES; SINGLE-CRYSTAL LAYER;

SEMICONDUCTOR DEVICES;

EID: 0020951199     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)