Snap-Back: A stable regenerative breakdown mode of mos Devices

IEEE Transactions on Nuclear Science

Volumn 30, Issue 6, 1983, Pages 4127-4130

  Sokel, R J ^b   Sexton, F W ^a   Wrobel, T F ^a   Hash, G L ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; INTEGRATED CIRCUITS - RADIATION EFFECTS; NEUTRONS; SEMICONDUCTOR DEVICES, MOS - RADIATION EFFECTS;

TRANSISTORS, BIPOLAR;

EID: 0020942842     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1983.4333094     Document Type: Article

References (3)

1. Toyabe, T. and Asai, S., “Analytical Model of Threshold Voltage and Breakdown Voltage of Short-Channel MOSFET's Derived from Two-Dimensional Analysis,” IEEE Trans. on Electron Devices, ED-26, No. 4, April 1979, pp. 453–461.
2. Muller, W., Risch, L., and Schitz, A., “Short Channel Channel MOS Transistors in the Avalanche Multiplication Regime,’ IEEE Trans. on Electron Devices, ED-29, No. 11, November 1982, pp. 1778–1784.
3. Sun, E., Moll, J., Berger, J., and Alders, B., “Breakdown Mechanism i n Short-Channel MOS Transistors,’ IEDM, Washington, DC, December 1979, pp. 478–482.