HOT CARRIERS INDUCED DEGRADATION IN THIN GATE OXIDE MOSFETs.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1983, Pages 186-189

  Liang, M S ^a   Chang, C ^a   Yang, W ^a   Hu, C ^a   Brodersen, R W ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

DEPENDENCE ON APPLIED OXIDE FIELD; GENERATION OF OXIDE-TRAPPED CHARGES; GENERATION RATES AS FUNCTION OF CARRIER FLUENCE; SUBSTRATE BIAS EFFECT; SUBSTRATE HOT ELECTRON EFFECT; SUBSTRATE HOT HOLE EFFECT;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0020938449     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/iedm.1983.190472     Document Type: Conference Paper

References (0)